Doped ceramics of indium oxides for negative permittivity materials in MHz-kHz frequency regions
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2021年第2期
论文作者：Guohua Fan Zhongyang Wang Kai Sun Yao Liu Runhua Fan
文章页码：125 - 131
摘 要：Negative permittivity has been widely studied in various metamaterials and percolating composites, of which the anomalous dielectric behavior was attributed to critical structural properties of building blocks.Herein, mono-phase ceramics of indium tin oxides（ITO） were sintered for epsilon-negative materials in MHz-k Hz frequency regions. Electrical conductivity and complex permittivity were analyzed with DrudeLorentz oscillator model. Carriers’ characters were measured based on Hall effect and the magnitude and frequency dispersion of negative permittivity were mainly determined by carrier concentration.Temperature-dependent dielectric properties further proved the epsilon-negative behaviors were closely associated with free carriers’ collective responses. It’s found that negative permittivity of ITO ceramics was mainly caused by plasma oscillations of free carriers, while the dielectric loss was mainly attributed to conduction loss. Negative permittivity realized here was related to materials intrinsic nature and this work preliminarily determined the mechanism of negative permittivity in doped ceramics from the perspective of carriers.
Guohua Fan1，Zhongyang Wang1，Kai Sun2，Yao Liu1，Runhua Fan2
1. Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University2. College of Ocean Science and Engineering, Shanghai Maritime University
摘 要：Negative permittivity has been widely studied in various metamaterials and percolating composites, of which the anomalous dielectric behavior was attributed to critical structural properties of building blocks.Herein, mono-phase ceramics of indium tin oxides（ITO） were sintered for epsilon-negative materials in MHz-k Hz frequency regions. Electrical conductivity and complex permittivity were analyzed with DrudeLorentz oscillator model. Carriers’ characters were measured based on Hall effect and the magnitude and frequency dispersion of negative permittivity were mainly determined by carrier concentration.Temperature-dependent dielectric properties further proved the epsilon-negative behaviors were closely associated with free carriers’ collective responses. It’s found that negative permittivity of ITO ceramics was mainly caused by plasma oscillations of free carriers, while the dielectric loss was mainly attributed to conduction loss. Negative permittivity realized here was related to materials intrinsic nature and this work preliminarily determined the mechanism of negative permittivity in doped ceramics from the perspective of carriers.
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