Loose-fit graphitic encapsulation of silicon nanowire for one-dimensional Si anode design
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2017年第10期
论文作者：Seh-Yoon Lim Sudong Chae Su-Ho Jung Yuhwan Hyeon Wonseok Jang Won-Sub Yoon Jae-Young Choi Dongmok Whang
文章页码：1120 - 1127
摘 要：Silicon nanowires（SiNWs） encapsulated with graphene-like carbon sheath（GS） having a void space in between（SiNW@V@GS） are demonstrated for the improved electrochemical performance of Si anode in lithium ion battery. The Si NW@V@GS structure was synthesized by a scalable fabrication method including four successive reactions: metal-catalyzed CVD growth of Si NWs, controlled thermal oxidation, and deposition of the graphitic layer, to form Si NW@SiO2@GS and additional chemical etching of sacrificial SiO2 layer between Si NWs and carbon sheath. During the synthetic process, the thickness of the void spacing was controlled by adjusting the oxidation-dependent process. The well-controlled void space and crystalline graphitic carbon sheath of the SiNW@V@GS structure enable good reversible capacity of1444 m Ahg-1 and cycling stability of 85% over 150 cycles.
Seh-Yoon Lim1，Sudong Chae1，Su-Ho Jung1，Yuhwan Hyeon1，Wonseok Jang1，Won-Sub Yoon2，Jae-Young Choi1，Dongmok Whang1
1. School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University2. Department of Energy Science, Sungkyunkwan University
摘 要：Silicon nanowires（SiNWs） encapsulated with graphene-like carbon sheath（GS） having a void space in between（SiNW@V@GS） are demonstrated for the improved electrochemical performance of Si anode in lithium ion battery. The Si NW@V@GS structure was synthesized by a scalable fabrication method including four successive reactions: metal-catalyzed CVD growth of Si NWs, controlled thermal oxidation, and deposition of the graphitic layer, to form Si NW@SiO2@GS and additional chemical etching of sacrificial SiO2 layer between Si NWs and carbon sheath. During the synthetic process, the thickness of the void spacing was controlled by adjusting the oxidation-dependent process. The well-controlled void space and crystalline graphitic carbon sheath of the SiNW@V@GS structure enable good reversible capacity of1444 m Ahg-1 and cycling stability of 85% over 150 cycles.
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