Photo-induced Phenomena in GeS4 Glasses
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2014年第3期
论文作者：顾少轩 SHEN Changjun ZANG Haochun 陶海征
文章页码：473 - 477
摘 要：GeS 4 bulk glasses were prepared by the melt-quench technique and the samples were irradiated by 532-nm linearly polarized light. After the laser treatment, the photo-induced changes of the samples were investigated by UV-1601 spectrophotometer and optical second-order nonlinear tester. The results show that the transmittance of the samples around 532 nm obviously decreases and Bragg refl ector forms, which is due to the production of photon-generated carriers. With the increase of laser pulse energy or the extension of irradiation duration, the Bragg refl ector increases and gradually tends to be stable. These can be ascribed to the excitationcapture process of the carriers. After irradiation, the relaxation phenomenon results from the release of part of the absorbed energy in the glass matrix. And the fi tting equation of the relaxation process is consistent with a conventional Kohlrausch stretched exponential function. The origin of the second harmonic generation（SHG） is because of the dipole reorientation caused by the photo-induced anisotropy in the glass.
顾少轩，SHEN Changjun，ZANG Haochun，陶海征
State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology
摘 要：GeS 4 bulk glasses were prepared by the melt-quench technique and the samples were irradiated by 532-nm linearly polarized light. After the laser treatment, the photo-induced changes of the samples were investigated by UV-1601 spectrophotometer and optical second-order nonlinear tester. The results show that the transmittance of the samples around 532 nm obviously decreases and Bragg refl ector forms, which is due to the production of photon-generated carriers. With the increase of laser pulse energy or the extension of irradiation duration, the Bragg refl ector increases and gradually tends to be stable. These can be ascribed to the excitationcapture process of the carriers. After irradiation, the relaxation phenomenon results from the release of part of the absorbed energy in the glass matrix. And the fi tting equation of the relaxation process is consistent with a conventional Kohlrausch stretched exponential function. The origin of the second harmonic generation（SHG） is because of the dipole reorientation caused by the photo-induced anisotropy in the glass.
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