Acheivement of Nano-Scale SiGe Layer with Discrete Ge Mole Fraction Profile Using Batch-Type HVCVD
来源期刊：JOURNAL OF RARE EARTHS2004年增刊第2期
论文作者：Tae-hun Shim Jea-gun Park Gon-sub Lee
Key words：strained Si; nano scale SiGe layer; Ge mole fraction; HVCVD; gas flow; boat-out time;
Abstract: The strained Si grown on the relaxed SiGe-on-insulator C-MOSFET's is a promising device for the future system LSI devices with the design rule of sub-micron. The achievement of the discrete Ge mole fraction in the SiGe layer is a key engineering in low-temperature SiGe epitaxial growth using HVCVD. The pre-flow of GeH4 gas enhanced the Ge mole fraction and SiGe layer thickness. In addition, the Ge mole fraction and SiGe layer thickness increases with the gas ratio of GeH4/SiH4 + GeH4, process temperature, and gas flow time. However, the haze was produced if the Ge mole fraction is above 22wt%. The discrete-like Ge mole fraction with 22 wt% in 10 nm SiGe layer was obtained by the pre-flow of GeH4 for 10 s, the mixture gas ratio of GeH4/SiH4 + GeH4 of 67%, and the gas flow time for 150 s at the process temperature of 550 C.
Tae-hun Shim1，Jea-gun Park1，Gon-sub Lee1
(1.Advanced Semiconductor Material and Device Development Center,Hanyang University,Seoul 133-791,Korea)
Abstract:The strained Si grown on the relaxed SiGe-on-insulator C-MOSFET''s is a promising device for the future system LSI devices with the design rule of sub-micron. The achievement of the discrete Ge mole fraction in the SiGe layer is a key engineering in low-temperature SiGe epitaxial growth using HVCVD. The pre-flow of GeH4 gas enhanced the Ge mole fraction and SiGe layer thickness. In addition, the Ge mole fraction and SiGe layer thickness increases with the gas ratio of GeH4/SiH4 + GeH4, process temperature, and gas flow time. However, the haze was produced if the Ge mole fraction is above 22wt%. The discrete-like Ge mole fraction with 22 wt% in 10 nm SiGe layer was obtained by the pre-flow of GeH4 for 10 s, the mixture gas ratio of GeH4/SiH4 + GeH4 of 67%, and the gas flow time for 150 s at the process temperature of 550 C.
Key words:strained Si; nano scale SiGe layer; Ge mole fraction; HVCVD; gas flow; boat-out time;
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