Approach to Weaken Auto-doping Effect in Si CVD Epitaxy by Compensation in Opposite Direction
来源期刊:Rare Metals1998年第4期
论文作者:刘玉岭 金杰 徐晓辉
文章页码:3 - 5
摘 要:1IntroductionThinlayerepitaxywithhighresistivityisakeytechniquetodevelopIC(integratedcircuit)withhighintegrationandhighper...
刘玉岭,金杰,徐晓辉
摘 要:1IntroductionThinlayerepitaxywithhighresistivityisakeytechniquetodevelopIC(integratedcircuit)withhighintegrationandhighper...
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