Growth and characterization of ZnTe single crystal via a novel Te flux vertical Bridgman method
来源期刊：Rare Metals2021年第4期
论文作者：Min Jin Wen-Hui Yang Xiang-Hu Wang Rong-Bin Li Ya-Dong Xu Jia-Yue Xu
文章页码：858 - 864
摘 要：In this work,an Ⅱ-Ⅵ group semiconductor zinc telluride（ZnTe） single crystal is prepared by a novel vertical Bridgman method using Te as flux.The initial mole ratio of Zn/Te=3:7 is designed for raw material synthesis.ZnTe polycrystalline combined with rich Te is effectively fabricated through rocking technique at 1100℃.A Φ 25 mm × 65 mm ZnTe boule is successfully grown under a～40 ℃·cm-1 temperature gradient with a growth speed of 5 mm·day-1.The as-grown ZnTe crystal has a standard 1:1 stoichiometric ratio and pure F43 m phase structure.The maximum transmittance perpendicular to（110） plane is about 64%,and the band gap（Eg） is tested to be 2.225 eV.Terahertz（THz） examination results demonstrate that the time of the highest THz signal is around 17 ps and the frequency of the highest THz transmission is about 0.78 THz,implying that the ZnTe crystal grown by the present Te flux vertical Bridgman method has a good feasibility for THz application.
Min Jin1，Wen-Hui Yang2，Xiang-Hu Wang1，Rong-Bin Li1，Ya-Dong Xu2，Jia-Yue Xu3
1. College of Materials,Shanghai Dianji University2. State Key Laboratory of Solidification Processing,Northwestern Polytechnical University3. School of Materials Science and Engineering,Shanghai Institute of Technology
摘 要：In this work,an Ⅱ-Ⅵ group semiconductor zinc telluride（ZnTe） single crystal is prepared by a novel vertical Bridgman method using Te as flux.The initial mole ratio of Zn/Te=3:7 is designed for raw material synthesis.ZnTe polycrystalline combined with rich Te is effectively fabricated through rocking technique at 1100℃.A Φ 25 mm × 65 mm ZnTe boule is successfully grown under a～40 ℃·cm-1 temperature gradient with a growth speed of 5 mm·day-1.The as-grown ZnTe crystal has a standard 1:1 stoichiometric ratio and pure F43 m phase structure.The maximum transmittance perpendicular to（110） plane is about 64%,and the band gap（Eg） is tested to be 2.225 eV.Terahertz（THz） examination results demonstrate that the time of the highest THz signal is around 17 ps and the frequency of the highest THz transmission is about 0.78 THz,implying that the ZnTe crystal grown by the present Te flux vertical Bridgman method has a good feasibility for THz application.
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