Effect of growth interruption and strain buffer layer on PL performance of AlGaAs/GaAs/InGaAs quantum well for 1065 nm wavelength lasers
来源期刊：Rare Metals2004年第1期
论文作者：PAN Jiaoqing, HUANG Baibiao, ZHANG Xiaoyang, YUE Jinshun, YU Yongqin, and WEI Jiyong) State Key Laboratory of Crystal Materials, Shandong Univeristy, Jinan , China) Shandong Huaguang Optoelectronics Co. Ltd, Jinan , China
文章页码：64 - 67
摘 要：<正> Strained InGaAs/GaAs quantum well （QW） was grown by low-pressure metallorganic chemical vapor deposition （MOCVD）. Growth interruption and strain buffer layer were introduced to improve the photoluminescence （PL） performance of the InGaAs/GaAs quantum well. Good PL results were obtained under condition of growth an interruption of 10 s combined with a moderate strain buffer layer. Wavelength lasers of 1064 nm using the QW were grown and processed into devices. Broad area lasers （100 μm × 500 μm） show very low threshold current densities （43 A/cm2） and high slop efficiency （0.34 W/A, per facet）.
摘要：<正> Strained InGaAs/GaAs quantum well （QW） was grown by low-pressure metallorganic chemical vapor deposition （MOCVD）. Growth interruption and strain buffer layer were introduced to improve the photoluminescence （PL） performance of the InGaAs/GaAs quantum well. Good PL results were obtained under condition of growth an interruption of 10 s combined with a moderate strain buffer layer. Wavelength lasers of 1064 nm using the QW were grown and processed into devices. Broad area lasers （100 μm × 500 μm） show very low threshold current densities （43 A/cm2） and high slop efficiency （0.34 W/A, per facet）.
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