Chemical Structure of Carbon Nitride Films Prepared by MW-ECR Plasma Enhanced Magnetron Sputtering
来源期刊：材料热处理学报2004年第5期
论文作者：XU Jun LI Xin DONG Chuang DENG Xin-lu GAO Peng DING Wan-yu
关键词：Carbon nitride; Plasma enhanced deposition; Microwave ECR plasma; Magnetron sputtering;
摘 要：Amorphous carbon nitride thin films were prepared by plasma-enhanced DC magnetron sputtering using twinned microwave electron cyclotron resonance plasma sources. Chemical structure of deposited films was investigated using X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The results indicate that the deposition rate is strongly affected by direct current bias, and the films are mainly composed of a single amorphous carbon nitride phase with N/C ratio close to C3N4, and the bonding is predominantly of C-N type.
XU Jun1，LI Xin1，DONG Chuang1，DENG Xin-lu1，GAO Peng1，DING Wan-yu1
(1.State Key Lab. for Materials Modification by Laser, Ion and Electron Beams Department of Physics, Dalian University of Technology, Dalian 116024, P. R. China)
摘要:Amorphous carbon nitride thin films were prepared by plasma-enhanced DC magnetron sputtering using twinned microwave electron cyclotron resonance plasma sources. Chemical structure of deposited films was investigated using X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The results indicate that the deposition rate is strongly affected by direct current bias, and the films are mainly composed of a single amorphous carbon nitride phase with N/C ratio close to C3N4, and the bonding is predominantly of C-N type.
关键词:Carbon nitride; Plasma enhanced deposition; Microwave ECR plasma; Magnetron sputtering;
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