Growth of High Quality Semi-Insulating InP Single Crystal by Suppression of Compensation Defects
来源期刊：JOURNAL OF RARE EARTHS2006年增刊第1期
论文作者：Zhao Youwen Yang Zixiang Sun Wenrong Duan Manlong Dong Zhiyuan
Key words：indium phosphide; defect; semi-insualting;
Abstract: Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results.
Zhao Youwen1，Yang Zixiang1，Sun Wenrong1，Duan Manlong1，Dong Zhiyuan1
(1.Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China)
Abstract:Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results.
Key words:indium phosphide; defect; semi-insualting;
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