Rapid communication Ruthenium disulfide thin films prepared by the successive ionic layer adsorption and reaction (SILAR) method
来源期刊:Rare Metals2004年第1期
论文作者:LIU Xiaoxin, JIN Zhengguo, ZHAO Juan, and BU ShaojingKey Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin , China
文章页码:93 - 96
摘 要:<正> RuS2 thin films were prepared by the cost-effective chemical method——successive ionic layer adsorption and reaction (SILAR). The structural, optical, and electrical properties were investigated using X-ray diffraction, scanning electron microscopy, optical transmittance, and electrical resistivity methods. The results indicate that the films are homogeneous and dense; the structure of the as-deposited films is amorphous and they crystallize after annealed at 500℃ for 30 min. The band gap of the as-deposited films is found to be 1.85 eV, and the electrical resistivity of them is in the order of 105 Ω.cm.
摘要:<正> RuS2 thin films were prepared by the cost-effective chemical method——successive ionic layer adsorption and reaction (SILAR). The structural, optical, and electrical properties were investigated using X-ray diffraction, scanning electron microscopy, optical transmittance, and electrical resistivity methods. The results indicate that the films are homogeneous and dense; the structure of the as-deposited films is amorphous and they crystallize after annealed at 500℃ for 30 min. The band gap of the as-deposited films is found to be 1.85 eV, and the electrical resistivity of them is in the order of 105 Ω.cm.
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