简介概要

Influence of Deposition Pressure on Properties of ZnO:Al Films Fabricated by RF Magnetron Sputtering

来源期刊:Journal Of Wuhan University Of Technology Materials Science Edition2016年第6期

论文作者:刘超英 HE Feng YAN Ningning ZANG Shuguang ZUO Yan MA Juanrong

文章页码:1235 - 1239

摘    要:Transparent conductive aluminum doped zinc oxide(ZnO:Al,AZO) films were prepared on glass substrates by rf(radio frequency) magnetron sputtering from ZnO: 3wt% Al2O3 ceramic target. The effect of argon gas pressure(PAr) was investigated with small variations to understand the influence on the electrical, optical and structural properties of the films. Structural examinations using X-ray diffraction(XRD) and scanning electron microscopy(SEM) showed that the ZnO:Al thin films were(002) oriented. The resistivity values were measured by four-point probe with the lowest resistivity of 5.76×10-4 Ω?cm(sheet resistance=9.6 Ω/sq. for a thickness=600 nm) obtained at the PAr of 0.3 Pa. The transmittance was achieved from ultravioletvisible(UV-VIS) spectrophotometer, 84% higher than that in the visible region for all AZO thin films. The properties of deposited thin films showed a significant dependence on the PAr.

详情信息展示

Influence of Deposition Pressure on Properties of ZnO:Al Films Fabricated by RF Magnetron Sputtering

刘超英1,2,3,HE Feng3,YAN Ningning1,2,ZANG Shuguang1,2,ZUO Yan1,2,MA Juanrong1

1. China Building Materials Academy3. School of Materials Science and Engineering,Wuhan University of Technology

摘 要:Transparent conductive aluminum doped zinc oxide(ZnO:Al,AZO) films were prepared on glass substrates by rf(radio frequency) magnetron sputtering from ZnO: 3wt% Al2O3 ceramic target. The effect of argon gas pressure(PAr) was investigated with small variations to understand the influence on the electrical, optical and structural properties of the films. Structural examinations using X-ray diffraction(XRD) and scanning electron microscopy(SEM) showed that the ZnO:Al thin films were(002) oriented. The resistivity values were measured by four-point probe with the lowest resistivity of 5.76×10-4 Ω?cm(sheet resistance=9.6 Ω/sq. for a thickness=600 nm) obtained at the PAr of 0.3 Pa. The transmittance was achieved from ultravioletvisible(UV-VIS) spectrophotometer, 84% higher than that in the visible region for all AZO thin films. The properties of deposited thin films showed a significant dependence on the PAr.

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