Band offsets between amorphous La2Hf2O7 and silicon
来源期刊：Journal of Rare Earths2012年第8期
论文作者：程学瑞 王永强 戚泽明 张国斌 王玉银 邵涛 张文华
文章页码：847 - 850
摘 要：Amorphous La2Hf2O7 films were grown on Si（100） by pulsed laser deposition method. The valence and conduction band offsets between amorphous La2Hf2O7 film and silicon were determined by using synchrotron radiation photoemission spectroscopy. The energy band gap of amorphous La2Hf2O7 film was measured from the energy-loss spectra of O 1s photoelectrons. The band gap of amorphous La2Hf2O7 film was determined to be 5.4±0.2 eV. The valence and the conduction-band offsets of amorphous La2Hf2O7 film to Si were obtained to be 2.7±0.2 and 1.6±0.2 eV, respectively. These results indicated that the amorphous La2Hf2O7 film could be one promising candidate for high-k gate dielectrics.
程学瑞1，王永强1，戚泽明2，张国斌2，王玉银2，邵涛2，张文华2
1. Department of Technology and Physics, Zhengzhou University of Light Industry2. National Synchrotron Radiation Laboratory, University of Science and Technology of China
摘 要：Amorphous La2Hf2O7 films were grown on Si（100） by pulsed laser deposition method. The valence and conduction band offsets between amorphous La2Hf2O7 film and silicon were determined by using synchrotron radiation photoemission spectroscopy. The energy band gap of amorphous La2Hf2O7 film was measured from the energy-loss spectra of O 1s photoelectrons. The band gap of amorphous La2Hf2O7 film was determined to be 5.4±0.2 eV. The valence and the conduction-band offsets of amorphous La2Hf2O7 film to Si were obtained to be 2.7±0.2 and 1.6±0.2 eV, respectively. These results indicated that the amorphous La2Hf2O7 film could be one promising candidate for high-k gate dielectrics.
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