P-type SnO thin films prepared by reactive sputtering at high deposition rates
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2019年第8期
论文作者：C.Guillén J.Herrero
文章页码：1706 - 1711
摘 要：SnO is an ideally suitable p-type conductive material, with large hole mobility, and has attracted great interest in connection with next-generation electronic applications. In the present work, tin oxide（SnOx）thin films were deposited on unheated soda lime glass substrates by reactive DC sputtering from a pure Sn target. The structural, optical and electrical properties of the films were analysed as a function of the oxygen partial pressure in the sputtering atmosphere and of the post-deposition annealing temperature in air. A structural analysis was carried out using Raman spectroscopy and X-ray diffraction. Optical and electrical characterizations were performed using photo-spectrometry and Hall effect measurements,respectively. The films grown at room temperature and low oxygen pressures reached high deposition rates of above 45 nm/min, showing poorly crystalline SnO and low transparency. Subsequent heating to 350℃ allowed to achieve a more crystalline tetragonal SnO with an average visible transmittance of 65%,a p-type conductivity of 0.8 S/cm, and a hole mobility of 3.5 cm2/（V s）.
C.Guillén，J.Herrero
摘 要：SnO is an ideally suitable p-type conductive material, with large hole mobility, and has attracted great interest in connection with next-generation electronic applications. In the present work, tin oxide（SnOx）thin films were deposited on unheated soda lime glass substrates by reactive DC sputtering from a pure Sn target. The structural, optical and electrical properties of the films were analysed as a function of the oxygen partial pressure in the sputtering atmosphere and of the post-deposition annealing temperature in air. A structural analysis was carried out using Raman spectroscopy and X-ray diffraction. Optical and electrical characterizations were performed using photo-spectrometry and Hall effect measurements,respectively. The films grown at room temperature and low oxygen pressures reached high deposition rates of above 45 nm/min, showing poorly crystalline SnO and low transparency. Subsequent heating to 350℃ allowed to achieve a more crystalline tetragonal SnO with an average visible transmittance of 65%,a p-type conductivity of 0.8 S/cm, and a hole mobility of 3.5 cm2/（V s）.
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