UHV/CVD Low-Temperature Si Epitaxy Used for SiGe HBT
来源期刊：JOURNAL OF RARE EARTHS2004年增刊第2期
论文作者：Shen Guanhao CHEN Peiyi HUANG Wentao TSIEN Peihsin Zhang Wei Li Xiyou Liu Zhihong CHEN Changchun
Key words：UHV/CVD; low temperature; Si epitaxy; dopant profile; SiGe; HBT;
Abstract: Low-temperature-epitaxy n-type silicon layers were grown on arsenic-doped n+-type silicon substrate by using ultra-high vacuum chemical vapor deposition (UHV/CVD). The transition region thickness of the Si layers grown under different PH3 flux and different growth temperature were investigated by spreading resistance probe. Results showed that the growth temperature had remarkable influence on the arsenic diffusion from the Si substrate. The thicknesses of the transition region were 0.16 μm grown at 700 ℃ and 0.06 μm grown at 500 ℃, respectively. Moreover, the dopant profiles were very abrupt. X-ray diffraction investigation of the epitaxial Si layer showed the quality of Si layer was very high.SiG e HBT device was fabricated by using a revised double-mesa polysilicon-emitter process. Tests show that the CB-junction breakdown characteristic of the SiGe HBT is very hard, and the leakage current is only 0.3 μA under a reverse voltage of - 14.0 V. The SiGe HBT device had also good output performance, and the current gain is 60.
Shen Guanhao1，CHEN Peiyi1，HUANG Wentao1，TSIEN Peihsin1，Zhang Wei1，Li Xiyou1，Liu Zhihong1，CHEN Changchun1
(1.Institute of Microelectronics,Tsinghua University,Beijing 100084,China)
Abstract:Low-temperature-epitaxy n-type silicon layers were grown on arsenic-doped n+-type silicon substrate by using ultra-high vacuum chemical vapor deposition (UHV/CVD). The transition region thickness of the Si layers grown under different PH3 flux and different growth temperature were investigated by spreading resistance probe. Results showed that the growth temperature had remarkable influence on the arsenic diffusion from the Si substrate. The thicknesses of the transition region were 0.16 μm grown at 700 ℃ and 0.06 μm grown at 500 ℃, respectively. Moreover, the dopant profiles were very abrupt. X-ray diffraction investigation of the epitaxial Si layer showed the quality of Si layer was very high.SiG e HBT device was fabricated by using a revised double-mesa polysilicon-emitter process. Tests show that the CB-junction breakdown characteristic of the SiGe HBT is very hard, and the leakage current is only 0.3 μA under a reverse voltage of - 14.0 V. The SiGe HBT device had also good output performance, and the current gain is 60.
Key words:UHV/CVD; low temperature; Si epitaxy; dopant profile; SiGe; HBT;
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