Application of Combined α-RBS and PIXE Analysis Technology
来源期刊：Rare Metals1992年第2期
论文作者：夏琮璜 沈定予 李硕中 刘士杰 王江 胡朝晖
文章页码：98 - 101
摘 要：<正> An analysis technique combining RBS with PIXE technology by x-particles incident beam was constructedand applied to analyse light impurities in heavier substrates.It can run in measuring Rutherford backscatteringand X-ray spectra in random and channeling mode,simultaneously.Being used to analyse sulphur atoms im-planted into GaAs single crystals,this method is relatively simple and quick-operating.It is especially useful foranalysing light impurities in semiconductor compounds,optoelectronic and microwave materials.
夏琮璜，沈定予，李硕中，刘士杰，王江，胡朝晖
摘 要：<正> An analysis technique combining RBS with PIXE technology by x-particles incident beam was constructedand applied to analyse light impurities in heavier substrates.It can run in measuring Rutherford backscatteringand X-ray spectra in random and channeling mode,simultaneously.Being used to analyse sulphur atoms im-planted into GaAs single crystals,this method is relatively simple and quick-operating.It is especially useful foranalysing light impurities in semiconductor compounds,optoelectronic and microwave materials.
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