Electropolishing technique of Hastelloy C-276 alloy
School of Materials Science and Engineering, Beijing University of Technology
收稿日期:23 January 2017
基金:financially supported by the National Science Foundation of China (Nos.51571002, 51171002 and 51401003);Beijing Municipal Natural Science Foundations (Nos.2132011 and KZ201310005003);
Electropolishing technique of Hastelloy C-276 alloy
Qiang Jia Yi Wang Hong-Li Suo Pan Wang Meng-Yuan Li Qian-Yu Huo
School of Materials Science and Engineering, Beijing University of Technology
Abstract:
Preparing a highly textured,flawless YBa2-Cu3O7(YBCO)layer by ion-beam-as sis ted deposition(IBAD)requires a substrate with a smooth surface.In this paper,smooth tapes of Hastelloy C-276,a common template alloy,were prepared by electrochemical polishing,and the surface roughness the tapes was investigating by atomic force microscopy and scanning electron microscopy.By analyzing these results,it was discussed how the processing parameters affect the surface roughness,and it is found the following optimized processing parameters:current density of 0.104 A·cm-2,temperature of 50℃,plate spacing of 9 cm and time of 150 s.With these optimized parameters,the substrate roughness decreases to less than 5 nm,meeting the requirements of IBAD.
Keyword:
Hastelloy C-276; Electro-chemical polishing; Atomic force microscopy; Current density;
Author: Hong-Li Suo,e-mail:honglisuo163@sina.com;
Received: 23 January 2017
1 Introduction
The second-generation high-temperature superconductor YBa2Cu3O7 exhibits great potential for practically applications such as cables and magnets.Ion-beam-assisted deposition (IB AD) has become the leading technique for fabricating templates for coated conductors.Producing high-performance coatings requires a smooth surface
In attempts to produce smooth surfaces,many methods have been explored,including mechanical polishing,chemical polishing,and electrochemical polishing
Qu et al.
In previous work,the surface roughness (Ra) of 4.5 nm was obtained by the polishing solution of phosphoric acid,sulfuric acid and citric acid
2 Experimental
The substrates of Hastelloy C-276 metal tapes (ZAPP Co.,Ltd.,Germany) with a width of 1 cm and thickness of70μm were chosen,and then they were cut into substrates with dimensions of 8 cm×1 cm.The original roughness of Has telloy C-276 metal tapes is about 20 nm.Before electropolishing,the substrate was rinsed in acetone in an ultrasonic bath for 1 min at room temperature,dehydrated with alcohol,and then dried in an air stream.The polishing liquid was mainly composed of phosphoric acid (80 vol%),sulfuric acid (10 vol%) and chromic acid (10 vol%).Electropolishing was performed in a batch electrochemical cell (YB1730A 5A),in which a Hastelloy sample was served as an anode,and a lead plate as a cathode.After connecting the substrate and a lead plate to the current leads,the substrate was immersed in the electrolyte,fixed at a depth of 5 cm.The bath temperature was controlled by a thermostat,as shown in Fig.1.
The surface of the substrate was characterized using X-ray diffractometer (XRD,D8 Bruker Advance) with Cu Kαradiation.The surface of the substrate was observed with scanning electron microscope (SEM,QUANTA-450),and its surface roughness (Ra) was measured with atomic force microscope (AFM,ICON).The AFM scanning range was 5μm×5μm,and the final data are averages of measurements from five points.
3 Results and discussion
3.1 Relationship of voltage and current
To understand the reaction on Hastelloy C-276 surface,we the voltage-current (U-I) relationship was measured by gradually increasing the voltage between the poles
Fig.1 Polishing device diagram
The BC stage is the mucous membrane formation stage in which increasing the voltage decreases the current.The anodic dissolution rate is higher at the electrode interface near the ion diffusion velocity.This behavior causes the metal ions to gradually gather near the metal surface between the metal surface and polishing solution,forming a liquid-membrane diffusion layer.In this diffusion process,the diffusion speed becomes uniform.With voltage increasing,the polishing current remains constant(0.52 A),as shown in Fig.2.Thus,it is believed that CD stage is suitable for polishing:
In this stage,the Hastelloy surface becomes smoother because a viscous layer forms near the surface,which has high resistance.The surface peaks correspond to a thinner viscous layer,letting a higher current density pass via the peaks and accelerating the reaction.The oxides react instead of the metal,and oxygen begins to appear with the surface reaction.
The DE stage is the electrolytic corrosion stage,where the final rise in current with potential increasing is caused by oxygen evolution.The high applied potential caused by these bubbles causes surface pitting and obstructs current paths.
Fig.2 Voltage-current (U-I) curve on Hastelloy C-276 surface
3.2 Optimization of electrochemistry polishing parameters
3.2.1 Temperature
The quality of an electrochemically polished surface depends on many factors,and temperature is the most important one
Fig.3 Roughness (Ra) as a function of electrolyte solution temper-ature at 3.2 V
The essential mechanism of electro-polishing is anodic dissolution,and the dominant parameter for dissolution is current density.At 50℃,increasing current density decreases the roughness.Because a high electrolyte temperature may accelerate dissolution,increasing the current density will offer more Mn+benefiting in the electropolishing.
3.2.2 Plate spacing and polishing time
To study the plate spacing and polishing time,the electrochemical polishing was fixed at 50℃,3.2 V and0.104 A·cm-2 with the plate spacing varying from 5 to11 cm.As the plate spacing increases,the roughness first decreases and then increases.The Ra value is minimized at a plate spacing of 9 cm,as shown in Fig.5a.When the spacing is too small,the edge of the substrate is overly polished;when the spacing is too large,the electropolishing does not produce any obvious effect.Thus,reasonable plate spacing is 9 cm.
The polishing time was also varied to 60,90,120,150and 180 s.With polishing time increasing,the surface roughness decreases.Polishing for 150 s produces a very smooth surface,with a value of 2.3 nm,as shown in Fig.5b.Polishing for longer time does not achieve good results,so the suitable polishing time is 150 s.
Fig.4 AFM images of samples electropolished at temperatures of a 30℃,b 40℃,c 50℃and d 60℃
Fig.5 Variation of Ra with a changing plate spacing (L) and b changing time (t)
Fig.6 XRD pattern of Hastelloy C-276 after electrochemical polishing
Before cleaning,the surface had some yellow material.This material could be dissolved in water and broke off easily after drying.Because the film thickness varies during polishing,very little Ni is dissolved during the concave part,and selective dissolution of Ni occurs during the current part under the action of current.In this step,Ni atoms break away and move to the outside of the lattice.In sulfuric acid and chromic acid under the action of the phosphoric acid dehydration,which generates pyrophosphate,Ni ions are diffused to the surface through the membrane and react with phosphoric acid to produce mainly Ni2P2O7,as shown in Fig.6.The phosphoric acid is dehydrated to form pyrophosphatic acid,which reacts with Ni ions to generate Ni2P2O7.This process makes the metal surface smooth.
Figure 7 shows SEM image of the surface after polishing,revealing that it is smooth and level.After polished with the optimized parameters,the substrate roughness decreases to less than 3 nm,meeting the requirements of IB AD.The smoother surface of the substrate produces an IBAD-YSZ buffer layer with better biaxial alignment.
Fig.7 SEM image of sample after polishing
Based on the results and discussion,the Ra value of the Hastelloy C-276 alloy substrate can be changed by controlling the anodizing factors:current density,solution temperature,polishing time and plate spacing.By optimizing these factors,Hastelloy C-276 substrates s iitable for superconductor applications were produced.
4 Conclusion
Hastelloy C-276 alloy substrates were polished in a concentrated sulfuric acid solution to optimize the polishing conditions.It is found the suitable current density,the key parameter in electrochemical polishing,to be0.104 A·cm-2.The other recommended electro-polishing conditions are an electrolyte temperature of 50℃,current density of 0.104 A·cm-2,plate spacing of 9 cm and time of150 s.Polishing with these parameters produces a level,bright surface with a surface roughness of 2.3 nm over a5 μm×5 μm area.By controlling these three factors,Hastelloy C-276 substrates with varying roughness can be produced.
Acknowledgements
This study was financially supported by the National Science Foundation of China (Nos.51571002,51171002and 51401003),and Beijing Municipal Natural Science Foundations(Nos.2132011 and KZ201310005003).
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