Preparation and high-frequency soft magnetic property of FeCo-based thin films
Fujian Key Laboratory of Advanced Materials,College of Materials,Xiamen University
收稿日期:25 July 2014
基金:financially supported by the National Basic Research Program of China(No.2012CB933103);the National Natural Science Foundation of China(Nos.51171158, 51371154 and 51301145);the Natural Science Foundation of Fujian Province of China(No.2014J05009);
Preparation and high-frequency soft magnetic property of FeCo-based thin films
Xiao-Long Liu Lai-Sen Wang Qin Luo Lei Xu Bei-Bei Yuan Dong-Liang Peng
Fujian Key Laboratory of Advanced Materials,College of Materials,Xiamen University
Abstract:
A series of FeCo-based thin films were prepared by magnetron sputtering without applying an induced magnetic field.The microstructure,electrical properties,magnetic properties and thermal stability of FeCo,FeCoSiN monolayer thin film and[FeCoSiN/SiNx]n multilayer thin film were investigated systematically.When FeCo thin film was doped with Si and N,the resistivity and soft magnetic properties of the obtained FeCoSiN thin film can be improved effectively.The coercivity(Hc),resistivity(ρ) and ferromagnetic resonance frequency(fr) can be further optimized for the[FeCoSiN/SiNx]n multilayer thin film.When the thickness of FeCoSiN layer and SiNx layer is maintained at 7 and 2 nm,the Hc,p and fr for[FeCoSiN/SiNx]n multilayer thin film are 225 A·m-1392 μΩ·cm-1 and 4.29 GHz,respectively.In addition,the low coercivity of easy axis(Hce ≈ 506 A·m-1) of[FeCoSiN/SiNx]n multilayer thin film can be maintained after annealing at 300 ℃ in air for 2 h.
Keyword:
Magnetic films; High-frequency; Soft magnetic; Thermal stability;
Author: Lai-Sen Wang,e-mail:wangls@xmu.edu.cn;
Received: 25 July 2014
1 Introduction
With the increasing need for miniaturization and integration of electronic devices,great efforts have been invested in the research of soft magnetic thin-film materials applied in GHz frequency range
In this paper,the microstructure,electrical properties,thermal stability,oxidation resistance and high-frequency soft magnetic properties of FeCo,FeCoSiN monolayer thin film and[FeCoSiN/SiNx]n multilayer thin film were studied systematically.The change in the coercivity was measured under different annealing temperatures (100,200,300,400,500 and 750℃) in air atmosphere for 2 h.Compared with the FeCo and FeCoSiN monolayer thin film,the[FeCoSiN/SiNx]n multilayer thin films exhibit better soft magnetic properties and oxidation resistance.Our results demonstrate that the[FeCoSiN/SiNx]n multilayer thin films havegreat promise in practical applications in GHz frequency range.
2 Experimental
The structures and thickness of FeCo-based thin films deposited on (100)-oriented silicon wafers and glass substrates are listed in Table 1.The base pressure of sputtering chamber was evacuated to less than 5×10-4 Pa before deposition.The sputtering process was carried out in Ar(10 ml·min-1) or Ar (10 ml·min-1)+N2 (1.11 ml·min-1)atmosphere,and the working pressure was kept at 0.4 Pa.The deposition process of the films was conducted using a power of 75 W for Fe65Co35 alloy target (7.62 cm,99.99%) and 200 W for Si target (5.08 cm,99.99%).The substrate holder with a rotation speed of 24 r·min-1 was mounted in the upper part of the chamber.The thickness of the thin films was regulated at about 120 nm by adjusting the sputtering time and monitored by the surface profiler(Alpha-Step D-100).The thin films were annealed under different temperatures ranging from 100 to 750℃in air for 2 h.
X-ray diffraction (XRD,PANalytical B.V.) was used to analyze the crystal structure of thin films.The surface morphologies were obtained by the field emission scanning electron microscopy (FESEM,SU 70) with an accelerating voltage of 15 kV.The chemical components were identified by X-ray photoelectron spectroscopy (XPS,PHI Quantum 2000).The static magnetic properties of thin films with different annealing temperatures were characterized by vibrating sample magnetometer (VSM,LakeShore 7404).The microwave permeability was measured by vector network analyzer with frequency ranging from500 MHz to 5 GHz.
3 Results and discussion
The XRD patterns of Samples L1,L2 and L3 sputtered at room temperature are shown in Fig.1.It can be noted that all the thin films exhibit an obvious diffraction peak nearby44°,indicating that the films have a bcc (110) phase.The half-width of the (110) diffraction peak gets wider from Samples L1 to L3,while the diffraction intensity of (110)peak accordingly decreases.Based on the Scherrer's equation,the average grain sizes are estimated to be 18.1,13.8 and 8.8 nm for Samples L1,L2 and L3,respectively.Therefore,the addition of Si and N elements and the adoption of the multilayer technology could decrease the grain size effectively.Additionally,there are no diffraction peaks originated from SiNx phase in the XRD patterns of Samples L2 and L3,suggesting that SiNx may exist as an amorphous phase.
Table 1 Essential information of FeCo-based thin films sputtered at room temperature
Figure 2 displays the FESEM images of Samples L1,L2and L3.The surface of the thin films becomes smooth,and the particle size decreases after the doping of Si and N elements into the FeCo alloy (Fig.2a,b).Moreover,the particle of Sample L3 is deeply refined,which means that SiNx interlayer could interrupt the growth of the FeCoSiN.
Figure 3 presents the high-resolution XPS spectra of Fe2p,Co 2p,Si 2p and N 1s of Samples L1,L2 and L3.The obvious characteristic peaks appeared in the vicinity of706.5,719.8,778.0 and 793.2 eV indicate zero-valent Fe and zero-valent Co in the samples (Fig.3a,b).The small satellite peaks (binding energy at around 711.4 and782.3 eV) are vested in the Fe-N bonds and Co-N bonds,respectively (the detailed analysis was well established in other publication
Fig.1 XRD patterns of Samples L1,L2 and L3 sputtered at room temperature
Fig.2 FESEM images of surface morphology of a Sample L1,b Sample L2 and c Sample L3
Fig.3 High-resolution XPS spectra of a Fe 2p,b Co 2p,c Si 2p and d N 1s peaks of Samples L1,L2 and L3
The classical in-plane hysteresis loops of Samples L1,L2 and L3 are shown in Fig.4a-c.All films exhibit an excellent squareness ratio and an evident in-plane uniaxial magnetic anisotropy.By forming the multilayered structure thin film by adding the nonmagnetic elements N and Si,Ms monotonously decreases from 2.10 (Sample L1) to 1.18 T(Sample L3),while Hk significantly increases from 2924 to13,051 A·m-1 without applying an induced magnetic field.The decrease in Ms is associated with the decrease in magnetic FeCo phase content.Meanwhile,the coercivity of easy axis (Hce) presents a descending trend from Samples L1 to L3 (here the easy axis is along the tangential direction of the rotation direction).This is mainly due to the decrease in grain size as seen from XRD results.The grain refinement could strengthen the exchange coupling effect between the grains,which reduces the effective magnetocrystalline anisotropy of a single grain and improves the soft magnetic properties of thin film
Fig.4 In-plane hysteresis loops (a,c,e) and frequency dependencies of real (μ') and imaginary(μ") parts of permeability spectra (b,d,f) at room temperature:a,b FeCo;c,d FeCoSiN;e,f[FeCoSiN/SiNx]n
Figure 5 depicts the coercivity of easy magnetizing axis(Hce) for Samples L1,L2 and L3 as a function of the annealing temperature.With the annealing temperature increasing,Hce of FeCo and FeCoSiN monolayer thin film increases initially and then decreases.The increase in Hce mainly results from the increase in grain size.However,the decrease in Hce after further annealing is mainly attributed to the remov al of internal stresses and the formation of magnetic oxide with smaller coercivity
Fig.5 Coercivity of Samples L1,L2 and L3 annealed at different temperatures
4 Conclusion
The microstructure,electrical properties,soft magnetic properties and thermal stability of FeCo,FeCoSiN monolayer thin film and[FeCoSiN/SiNx]n multilayer thin film were investigated systematically.All the films show the high 4πMs and an evident in-plane uniaxial magnetic anisotropy (Hk).Compared with FeCo and FeCoSiN monolayer thin film sputtered at room temperature,[FeCoSiN/SiNx]n multilayer thin film exhibits a relatively low Hce(225 A·m-1),high Hk(13,051 A·m-1),highp (392μΩ·cm)andhighfr (4.29 GHz).In addition,the thermal stability and oxidation resistance of[FeCoSiN/SiNx]n multilayer thin film are proved to be far stronger than those of FeCo thin film and FeCoSiN monolayer thin film.Therefore,the[FeCoSiN/SiNx]n multilayer thin film will be a more suitable candidate for high-frequency application in electromagnetic devices.
Acknowledgments This study was financially supported by theNational Basic Research Program of China (No.2012CB933103),theNational Natural Science Foundation of China (Nos.51171158,51371154 and 51301145),and the Natural Science Foundation ofFujian Province of China (No.2014J05009).
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