共搜索到14419条信息，每页显示10条信息，共1442页。用时：0小时0分0秒272毫秒

• Single-atom spintronics

  来源： 《中国有色金属学报(英文版)2006年第z1期》——Susan Z. HUA Matthew R. SULLIVAN Jason N. ARMSTRONG

  and size dependent oscillatory magnetoresistance. Key words: quantum point contact; magnetoresistance; quantum domain wall; electron wave-guide; oscillatory magnetoresistance 1 Introduction... the primary transmitted electron wave and the secondary waves arising from scattering in the diffusive banks. Presence of a domain wall across a contact made of a magnetic atom can lead to a further......

• Electron theory analysis on Ti-6Al-4V and Au-8Pd-10Pt alloys

  来源： 《中国有色金属学报(英文版)2000年第2期》——吕宇鹏 朱瑞富 雷廷权 李士同 马泉生 李木森 朝志强

  ......

• Electron beam welding of SiC_p/LD2 composite

  来源： 《中国有色金属学报(英文版)2006年第4期》——陈茂爱 武传松 邹增大

  Electron beam welding of SiCp/LD2 composite CHEN Mao-ai(陈茂爱), WU Chuan-song(武传松), ZOU Zeng-da(邹增大) Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University,Ji’nan 250061, China Received 18 October 2005; accepted 23 November 2005 Abstract: The 2 mm-thick SiCp/LD2 composite plates were electron beam welded at different heat inputs......

• Nano-structural Modification of Amorphous Carbon Thin Films by Low-energy Electron Beam Irradiation

  来源： 《材料热处理学报2004年第5期》——Masanori Yamaguchi Eiji Iwamura

  Nano-structural Modification of Amorphous Carbon Thin Films by Low-energy Electron Beam Irradiation Masanori Yamaguchi1,Eiji Iwamura2 (1.Lamp Company, Ushio INC., Himeji, Japan;2.PRESTO, Japan Science and Technology Agency, Tokyo, Japan) 摘要:A new approach using a low-energy electron beam radiation system was investigated to synthesize carbon hybrid structures in amorphous carbon thin films......

• Thermionic Electron Emission Stability of Mo-La2O3 Cathode

  来源： 《JOURNAL OF RARE EARTHS2004年第3期》——周美玲 张久兴 万小峰 左铁镛 刘燕琴 周文元

  Thermionic Electron Emission Stability of Mo-La2O3 Cathode 周美玲1,张久兴1,万小峰1,左铁镛1,刘燕琴1,周文元1 (1.The key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing University of Technology, Beijing 100022, China) Abstract:The carbonizing process and its influence on the thermionic electron emission properties of Mo-La2O3 cathode materials were investigated. The carbonized......

• Interface electron structure of Fe₃Al/TiC composites

  来源： 《中国有色金属学报(英文版)2006年第2期》——庞来学 孙康宁 孙家涛 范润华 任 帅

  of wave function continuity. Based on it, LIU et al[7] proposed a method to calculate the biphase interface valence electron structure, and found that the electron density of (111)γ //(110)α interface... Interface electron structure of Fe3Al/TiC composites PANG Lai-xue(庞来学)1, SUN Kang-ning(孙康宁)1, 2, SUN Jia-tao(孙家涛)1, FAN Run-hua(范润华)1, 2, REN Shuai(任 帅)1 1. Key Laboratory of Engineering......

• Influence of Ca addition on valence electron structure of Mg₁₇Al₁₂

  来源： 《中国有色金属学报(英文版)2003年第6期》——杜温文 孙扬善 闵学刚 薛烽 武登云

    ......

• Specimen preparation of aluminum alloy powders for transmission electron microscopy

  来源： 《中国有色金属学报(英文版)2000年第3期》——董寅生 沈军 杨英俊 林萍华 李庆春

  ......

• A MONTE CARLO SIMULATION OF SECONDARY ELECTRON AND BACKSCATTERED ELECTRON IMAGES IN SCANNING ELECTRON MICROSCOPY

  来源： 《Acta Metallurgica Sinica2005年第3期》——H.M.Li Z.J.Ding

  A MONTE CARLO SIMULATION OF SECONDARY ELECTRON AND BACKSCATTERED ELECTRON IMAGES IN SCANNING ELECTRON MICROSCOPY H.M.Li1,Z.J.Ding1 (1.Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026, China) Abstract:A new parallel Monte Carlo simulation method of secondary electron (SE) and backscattered......

• Comparison of Electron Acceleration Ability of SiO2 and ZnS from ZnS: Er Transient Electroluminescence

  来源： 《JOURNAL OF RARE EARTHS2006年第3期》——Liu Ling Meng Lijian Zhang Fujun Xu Zheng

  Comparison of Electron Acceleration Ability of SiO2 and ZnS from ZnS: Er Transient Electroluminescence Liu Ling1,Meng Lijian2,Zhang Fujun1,Xu Zheng3 (1.Key Laboratory of Luminescence and Optical... intensity under positive and negative half period is 2.18. This result demonstrates that the electron acceleration ability of SiO2 is 2.18 times stronger than that of ZnS. Key words:electron......