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Effects of Germanium on Movement of Dislocations in p-Type Czochralski Silicon Zhao Yiying1,Yang Deren1,Li Dongsheng1 (1.State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China) Abstract:By indentation at room temperature followed by annealing at high temperatures, the pinning effect of germanium on dislocations in germanium-doped Czochralski silicon......
Annealing behaviors of vacancy in varied neutron irradiated Czochralski silicon CHEN Gui-feng(陈贵锋), LI Yang-xian(李养贤), LIU Li-li(刘丽丽), NIU Ping-juan(牛萍娟), NIU Sheng-li(牛胜利... complex (VO) in varied dose neutron irradiated Czochralski silicon: (S1 5×1017 n/cm3 and S2 1.07×1019 n/cm3) were studied. The results show that the VO is one of the main defects formed in neutron......
Influence of rapid thermal process on intrinsic gettering in fast neutron irradiated Czochralski silicon CHEN Gui-feng(陈贵锋)1, LI Yang-xian(李养贤)1, LI Xing-hua(李兴华)1, CAI Li-li(蔡莉莉)1,MA Qiao-yun(马巧... Czochralski (CZ) silicon. The effect of RTP conditions on bulk microdefects (BMDs) and denuded zone (DZ) was investigated. Fourier transform infrared absorption spectrometer (FTIR) was used to measure......
Defects in Fast-Neutron Irradiated Nitrogen-Doped Czochralski Silicon after Annealing at High Temperature Chen Guifeng1,Liu Lili1,Li Yangxian1,Yang Shuai1,Sun Yong1,Ma Qiaoyun1 (1.School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China) Abstract:Fast-neutron irradiated nitrogen-doped Czochralski silicon (NCZ-Si) was annealed at 1100 ℃ for different......
Czochralski technique along the a-axis and two large (001) facets and two small (100) facets appear in every crystal. An arrangement of parallel steps and a clear height change were observed in (001... optical quality and high optical transmittance in c-direction. Key words:czochralski method; gallium compounds; atomic force microscopy; [全文内容正在添加中] ......
轴向磁场对硅单晶Czochralski生长过程的影响 彭岚1,余长军1,吴双应1,李友荣1 (1.重庆大学) 摘要:利用有限元方法对炉内的传递过程进行了全局数值模拟,假定熔体和气相中的流动都为准稳态轴对称层流,熔体为不可压缩流体,Cz炉外壁温度维持恒定,模拟磁场强度范围为(0~0.3)T,研究了用Czochralski(Cz)法生长单晶硅轴向磁场对熔体流动和氧传输过程的影响.结果表明:轴向磁场可有效地抑制熔体内的流动,但增大加热器功率和结晶界面处晶体内的轴向温度梯度;对于常规Cz炉,轴向磁场可增大结晶界面平均氧浓度,而对于具有气体导板的Cz炉,则会减小结晶界面平均氧浓度. 关键词:材料科学基础学科; 全局分析; 有限元方法; 硅Cz炉; 轴向磁场; [全文内容正在添加中] ......
Sr0.95Ba0.05WO4 and Nd: Sr0.95Ba0.05WO4 single crystals belonged to tetragonal system and I41/a space group. Transparent Nd: Sr0.95Ba0.05WO4 single crystal could be obtained along c-axis by Czochralski method..., and this is as better as a Raman laser crystal. Key words:Czochralski method; Nd:Sr0.95Ba0.05WO4 crystal; tungstates; rare earths; [全文内容正在添加中] ......
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, Tianjin 300072, China) Abstract:Single rare earth fluoride crystal of BaY2F8 was grown by Czochralski method. The crystallization habit of BaY2F8 and the crystal growth technique, including... words:BaY2F8 crystal; Czochralski method; thermal gradient; transparent rate; [全文内容正在添加中] ......
Oxygen Incorporation in Czochralski Growth of Silicon under a Horizontal Magnetic FieldWang Tihu Li Yingchun Qin Fu General Research Institute for Non-ferrous Metals,Beijing,100088摘 要:<正> A mechanism of oxygen transportation in Czochralski growth of silicon crystals under a horizontal magnetic field(HMCZ)is proposed.Oxygen depleted surface melt......