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用MOS-2和MA-1混合捕收剂浮选含金硫化铜矿 胡建国1 (1.江西铜业公司 武山铜矿,) 摘要:采用MOS-2和MA-1新型浮选药剂组方,对武山铜矿的铜 ,金,银进行选别试验.结果表明,在不改变工艺流程,不增加设施的情况下,不但提高了 铜,金,银的选别指标,而且还可以减少药剂用量和石灰用量,降低生产成本. 关键词:MOS-2; MA-1; 浮选; 铜; 金; 银; 药剂; [全文内容正在添加中] ......
Electrical properties of HfTiO Gate Dielectric Ge MOS capacitors with wet-No surface pretreatment () 摘要:Surface pretreatments for preparing HfTiO/GeO_xN_y stack gate dielectric on n-Ge substrate have been investigated.Excellent performances of Al/HfTiO/GeO_x N_y/n-Ge MOS capacitor have been achieved with an equivalent oxide thickness of 1.44 nm,physical thickness of 7.2 nm,equivalent......
Hydrothermal Synthesis and Visible-light Photocatalytic Activities of SnS2 Nanoflakes贾铁昆1,2,MIN Zhiyu1,CAO Jianliang2,SUN Guang2,WANG Xiaodong2,ZHANG Zhanying2,LI Tingting31. Department of Materials...="ChDivSummary" name="ChDivSummary">SnS2 nanoflakes were successfully synthesized via a simple hydrothermal process. The as-prepared SnS2 samples were characterized by X-ray diffraction(XRD), scanning electron......
金属纳米晶的制备及其在MOS电容结构中的存储特性 倪鹤南1,宋志棠3,吴良才3,惠春2 (1.上海交通大学微纳科学技术研究院,上海,200050;2.上海交通大学生命科学技术学院,上海,200030;3.中国科学院上海微系统与信息技术研究所纳米技术实验室,上海,200030) 摘要:优化了金属纳米晶的制备工艺参数,得到了分布均匀,形状为球形,平均尺寸8nm,密度2.5×1011/cm2的Ag纳米晶.在此基础上,制备了包含Ag纳米晶的MOS电容结构.利用高频电容-电压(C-V)和电导-电压(G-V)测试研究了其电学性能,证明该MOS电容结构的存储效应主要源于金属纳米晶的限制态.电容-时间(C-t)测试曲线呈指数衰减趋势,保留时间290s,具有较好的保留性能. 关键词:非挥发性存储器; 纳米晶; 金属纳米晶; [全文内容正在添加中] ......
MOS器件直接隧穿栅电流及其对CMOS逻辑电路的影响唐东峰1, 2,张平1,龙志林1,胡仕刚2,吴笑峰2(1. 湘潭大学 土木工程与力学学院,湖南 湘潭,411105；2. 湖南科技大学 信息与电气工程学院,湖南 湘潭,411201)摘 要:随着晶体管尺寸按比例缩小,越来越薄的氧化层厚度导致栅上的隧穿电流显著地增大,严重地影响器件和电路的静态特性,为此,基于可靠性理论和仿真,对小尺寸MOSFET (metal-oxide-semiconductor field effect transistor)的直接隧穿栅电流进行研究,并通过对二输入或非门静态栅泄漏电流的研究,揭示直接隧穿栅电流对CMOS(complementary metal oxide semiconductor)逻辑电路的影响.仿真工具为HSPICE软件,MOS器件模型参数采用的是BSIM4和LEVEL 54,栅氧化层厚度为......
Electrical characteristics of MOS capacitor using amorphous Gd2O3-doped HfO2 insulator季梅,王磊,熊玉华,杜军Advanced Electronic Materials Institute,General Research Institute for Nonferrous Metals摘 要:This work described the electrical characteristics of a kind of amorphous Gd2O3-doped HfO2 insulator for high-k metal-oxide-semiconductor(MOS) capacitors.Compared......
Electrical characteristics of MOS capacitor using amorphous Gd2O3-doped HfO2 insulator季梅,王磊,熊玉华,杜军Advanced Electronic Materials Institute,General Research Institute for Nonferrous Metals摘 要:This work described the electrical characteristics of a kind of amorphous Gd2O3-doped HfO2 insulator for high-k metal-oxide-semiconductor(MOS) capacitors.Compared......
Electrical Characteristics of MOS Capacitors with HfTiON as Gate Dielectric徐静平School of Computer and Communication, Hunan University of TechnologyDepartment of Electronic Science & Technology, Huazhong University of Science and Technology摘 要:HfTiN film was deposited by co-reactive sputtering and then was annealed in dif-ferent gas ambients......
金属有机骨架化合物(MOs)的研究进展陈文亮摘 要:随着社会的不断发展,国民经济也在不断增长,人们的生活水平也得到了提高.但是同时高消耗高污染的资源使用也对当前生态环境造成了严重的破坏,让有限资源变得越来越稀少.因此,需要提高人们的环保意识,开发可以循环利用的清洁能源,既能够推动经济增长,又可以维护生态平衡,实现可持续发展.近年来通过不断研究发现了金属有机骨架化合物MOFs,是由处于过渡期的金属离子和氮元素或氧元素有机配位形成.研制出的新型金属有机骨架化合物MOFs不仅尺寸小,可以实现纳米级,而且由于其他独特的规律性的骨架孔道结构也让这种材料具备了大比表面积,孔隙率高,固体密度小等常规材料所不具备的优势.MOFs被广泛应用在工业的吸附,催化等方面,并取得了显著的成绩,是我国工业可持续发展的重要组成部分......
Crystal structure and magnetic properties of SmCo6.6Nb0.4 nanoflakes prepared by surfactant-assisted ball milling潘蕊1,岳明1,张东涛1,高学绪2,刘卫强1,张久兴1,郭朝辉3,李卫31. College of Materials Science and Engineering... effects of ball milling time on the c-axis crystallographic alignment and coercivity of the nanoflakes were systematically investigated.The research showed that the nanoflakes had an average thickness......
