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Study on Processing Conditions of Aluminum Matrix Composites Reinforced with Boron Carbide Particles YI XiaoSu1,Fu Xueying2,XI Huizhi2,Zhang Hong1 (1.National Key Laboratory of Advanced Composites,Beijing Institute of Aeronautical Materials,Beijing 100095,China;2.Material Department,Harbin Engineering University,Harbin 150001,China) Abstract:Different pre-heating of boron carbide particles......
Phase Analysis of Cemented Carbide WC-Co Boronised with Yttrium 刘寿荣1,郝建民2,褚连青2,宋俊亭1 (1.Tianjin Institute of Cemented Alloy, Tianjin 300222, China;2.Tianjin Institute of Electronic Material, Tianjin... temperature to 1300 ℃. The results show that, the high-conc entration active boron atoms are released from the boron-supply agent B4C loc ated on the alloy surface and diffused into the γ-phase, leading......
Electric Heating Property from Butyl RubberLoaded Boron Carbide Composites孟德川,王宁会,LI GuofengSchool of Electrical Engineering, Dalian University of Technology摘 要:We researched the electric heating property from butyl rubber-loaded boron carbide composite. The effects of boron carbide content on bulk resistivity, voltage-current characteristic, thermal......
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J. Cent. South Univ. (2021) 28: 1627-1636 DOI: https://doi.org/10.1007/s11771-021-4722-x Influence of particle size and surfactants on uniformity and quantity of silicon carbide particles in electrodeposited nickel-silicon carbide coatings KAN Hong-min(阚洪敏)1, 2, MENG Yuan-yuan(孟媛媛)1, 2, Ramana G REDDY3 1. School of Mechanical Engineering, Shenyang University, Shenyang 110044, China; 2. Key......
Preparation of CaB6 powder via calciothermic reduction of boron carbideYu Wang1,Guo-hua Zhang1,Yue-dong Wu1,Xin-bo He21. State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing2. Institute for Advanced Materials and Technology, University of Science and Technology Beijing摘 要:The method of calciothermic reduction of B4C......
] JANSON M S, LINARSSON M K, HALLEN A, et al. Transient enhanced diffusion of implanted boron in 4H-silicon carbide[J]. Appl Phys Lett, 2000, 76: 1434-1436. [16] FORSBERG U, DANIELSSON ?, HENRY A, et... Aluminum doping and dielectric properties of silicon carbide by CVD LI Zhi-min(李智敏), SU Xiao-lei(苏晓磊), LUO Fa(罗 发), ZHU Dong-mei(朱冬梅), ZHOU Wan-cheng(周万城) State Key Laboratory......
结果表明:薄膜的结晶性随着衬底温度的升高逐渐转好,在较低的衬底温度下制备出多晶碳化硼薄膜.XPS分析得到了碳化硼薄膜表面的化学成分和结构特性,其主要成分为B_4C.AFM结果表明,薄膜表面光滑平整,均匀致密,随着衬底温度的升高薄膜均方根(RMS)粗糙度逐渐增大. 关键词:电子束蒸发; 碳化硼薄膜; XRD; XPS; electron beam evaporation; boron carbide thin films; XRD; XPS; [全文内容正在添加中] ......
Tungsten carbide platelet-containing cemented carbide with yttrium containing dispersed phase ZHANG Li(张 立)1, CHEN Shu(陈 述)2, WANG Yuan-jie(王元杰)1, YU Xian-wang(余贤旺)1, XIONG Xiang-jun(熊湘君)1 1...; Abstract: A fine and platelet tungsten carbide patterned structure with fine yttrium containing dispersed phase was observed in liquid phase sintered WC-20%Co-1%Y2O3 cemented carbide with ultrafine......