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Exchange bias on polycrystalline BiFeO3/Co2Fe(Al0.5Si0.5) heterostructuresShi-Zhe Wu,Yong Wu,Shao-Qian Yin,Xiao-Guang Xu,Jun Miao,Yong JiangSchool of Materials Science and Engineering, University... to 500 °C.The exchange bias field can be tuned by the annealing temperature for the heterostructures, and the electric domain size can be controlled by the crystal grain size. A large exchange bias......
Perpendicular exchange bias of (Pt/Co)_n/FeMn multilayersZhonghai Zhai1,2), Yang liu1), Jiao Teng1), Baohe Li1,3), Guanghua Yu1), and Fengwu Zhu1) 1) Materials Science and Engineering School... as the buffer layer and the capping layer. The dependence of perpendicular exchange bias (PEB), Hex, on the thickness of the FeMn antiferromagnet (AFM) layer is similar to that of in-plane exchange bias......
Role of competing interactions on dynamic relaxation and exchange bias in spin-glass/ferromagnet bilayerXiaodan Chi1,Yong Hu1,21. Department of Physics, College of Sciences, Northeastern University2... involving exchange bias field(HE) and coercivity(HC).A fastest decay of relaxation in SG/FM bilayer is found at an intermediate JSG~5.2 erg/cm2 and the relaxation parameters related to JSG......
; texture; interface roughness; exchange bias field; [全文内容正在添加中] ......
IrMn基自旋阀结构多层膜的热弛豫研究 周广宏1,王寅岗1,陈杰1,祁先进1 (1.南京航空航天大学,江苏,南京,210016) 摘要:采用磁控溅射方法制备结构为CoFe/Cu/CoFe/IrMn的自旋阀结构多层膜,研究它的热弛豫现象.实验表明,多层膜在其负饱和场中等待时,钉扎层的磁滞回线向正场方向移动,交换偏置场单调减小,并且随温度升高而加速减小.交换偏置场的减小是由反铁磁层的反转引起的,它可以看作是反铁磁磁矩越过一定能垒的热激活反转过程.温度升高后,能垒的分布发生了改变. 关键词:热弛豫; IrMn基自旋阀; 交换偏置场; 磁化反转; thermal relaxation; IrMn-based spin valve; exchange bias field; magnetization reversal; [全文内容正在添加中] ......
Characterization of (100)-orientated diamond film grown by HFCVD method with a positive DC bias voltage MA Ying(马 莹)1, WANG Lin-jun(王林军)1, LIU Jian-min(刘建敏)1, SU Qing-feng(苏青峰)1, XU Run(徐... (HFCVD) technology with a positive DC bias voltage. The morphology, X-ray diffraction (XRD), RAMAN spectrum and dark current versus applied voltage characteristics analysis show that the positive dc bias......
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THE EFFECTS OF PULSE BIAS VOLTAGE AND N2 PARTIAL PRESSURE ON TiAIN FILMS OF ARC ION PLATING (AIP) C.Sun1,M.S.Li1,S.L.Zhu1,L.S.Wen1,Fuhui WANG1 (1.Institute of Metal Research, The Chinese Academy... parameters such ascompositions of target materials, N2 partial pressure, substrate bias and so on. ln thisstudy, several titanium aluminum nitride films were deposited on 1Cr11Ni2 W2Mo Vsteel......
Grid and substrate bias effects on mechanical properties of diamond films prepared by HFCVD XU Feng(徐 锋)1, 2, ZUO Dun-wen(左敦稳)1, LU Wen-zhuang(卢文壮)1, ZHU Yong-wei(朱永伟)1, WANG Min(王 珉...; Abstract: Diamond films were prepared at different grid bias and substrate bias in hot filament chemical vapor deposition (HFCVD) system. The Raman......
Mn成分对CoFe/Pt_(50)(Cr_(100-x)Mn_x)_50体系交换偏置的影响 倪经1,雷勇2,邵晓萍2,代波2 (1.西南应用磁学研究所,四川,绵阳,621000;2.西南科技大,学材料科学与工程学院,四川,绵阳,621010) 摘要:采用直流磁控溅射的方法制备了CoFe/Pt-CrMn交换偏置体系,反铁磁的Pt-CrMn是利用[Pt/CrMn]_n多层膜并经过300℃,2h的退火获得.通过调整Mn的成分,系统地研究了体系交换偏置场的变化.获得了钉扎性能良好的L10相反铁磁钉扎材料Pt-CrMn,即CoFe/Pt_(50)(Cr_(88)Mn_(12))_(50)钉扎体系,其界面交换耦合能为0.22×10~(-7)J/cm~2,截止温度(blocking temperature)为480℃. 关键词:交换偏置; 钉扎场; 反铁磁; exchange bias......