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• Wettability　of　Monocrystalline　Silicon　Carbide　by　Molten　Metals　and　Binary　Metal－Silicon　Alloys

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  来源： 《Rare Metals1995年第2期》——李建国

  Wettability　of　Monocrystalline　Silicon　Carbide　by　Molten　Metals　and　Binary　Metal－Silicon　Alloys李建国摘 要:ＷｅｔｔａｂｉｌｉｔｙｏｆＭｏｎｏｃｒｙｓｔａｌｌｉｎｅＳｉｌｉｃｏｎＣａｒｂｉｄｅｂｙＭｏｌｔｅｎＭｅｔａｌｓａｎｄＢｉｎａｒｙＭｅｔａｌ－ＳｉｌｉｃｏｎＡｌｌｏｙｓＬｉＪｉａｎ’ｇｕｏ(李建国)(ＩｎｓｔｉｔｕｔｆｕｒＮｉｃｈｔｍｅｔａｌｌｉｓｃ...关键词:......

• CHARACTERIZATION OF Sil-x-yGexCy FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPITAXY

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  来源： 《Acta Metallurgica Sinica2002年第1期》——Y.Y.Wang S.Y.Ma J.Zhang W.J.Cheng X.Q.Liu

  CHARACTERIZATION OF Sil-x-yGexCy FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPITAXY Y.Y.Wang1,S.Y.Ma1,J.Zhang1,W.J.Cheng1,X.Q.Liu1 (1.Department of Physics, Lanzhou University, Lanzhou 730000, China;2.Department of physics, Northwest Normal University, Lanzhou 730030, China) Abstract:Si1 y GexCy ternary alloy films were grown on monocrystalline silicon substratesby C+ ion......

• 单晶铜纳米加工过程中热效应及缺陷结构的原子尺度模拟

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  来源： 《中国有色金属学报(英文版)2012年第11期》——郭永博 梁迎春

  Engineering, Harbin Institute of Technology, Harbin 150001, China Received 9 October 2011; accepted 15 September 2012 Abstract: Molecular dynamics (MD) simulations of monocrystalline copper (100... quality. Key words: monocrystalline copper; atomistic simulation; thermal effects; molecular dynamics simulation; nanomachining; temperature distribution; defect structures; dislocations; vacancies 1......

• SILICON MICRO-TRENCH ETCHING USING HIGH-DENSITY PLASMA ETCHER

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  来源： 《Acta Metallurgica Sinica2005年第3期》——H.C.Yu M.B. Chen J.M. Miao Z.G.Liu T.T. Sun

  SILICON MICRO-TRENCH ETCHING USING HIGH-DENSITY PLASMA ETCHER H.C.Yu1,M.B. Chen1,J.M. Miao2,Z.G.Liu1,T.T. Sun1 (1.Physics Department of ShanghaiJiaotong University, Shanghai 200240, China;2.Micromachine Center, School of Mechanical and Production Engineering, Nanyang Technological University, 639798, Singapore) Abstract:Dry etching of silicon is an essential process step for the fabrication......

• Preparation of porous silicon carbide by combustion synthesis^①

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  来源： 《中南大学学报(英文版)2005年第2期》——张宇民 张剑寒 韩杰才

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• Simulation and prediction in laser bending of silicon sheet

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  来源： 《中国有色金属学报(英文版)2011年第z1期》——WANG Xu-yue XU Wei-xing, XU Wen-ji HU Ya-feng LIANG Yan-de WANG Lian-ji

  Simulation and prediction in laser bending of silicon sheet WANG Xu-yue, XU Wei-xing, XU Wen-ji, HU Ya-feng, LIANG Yan-de, WANG Lian-ji Key Laboratory for Precision and Non-traditional Machining... silicon sheet (0.2 mm in thickness) was investigated with JK701 Nd:YAG laser. The models were developed to describe the beam characteristics of pulsed laser. In order to simulate the process of laser......

• NITROGEN-OXYGEN COMPLEXES IN SILICON AND THEIR DONOR ACTION

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  来源： 《中国有色金属学报(英文版)1999年第2期》——Liu Peidong Li Xiaojun

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• INFLUENCE OF NITROGEN ON THERMAL WARPAGE IN CZOCHRALSKI SILICON WAFERS

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  来源： 《中国有色金属学报(英文版)1999年第2期》——Lu Huanming

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• Dielectric properties of doped silicon carbide powder by thermal diffusion

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  来源： 《中国有色金属学报(英文版)2007年增刊第1期(Part ⅡB)》——苏晓磊 李智敏 罗发 王晓艳 朱冬梅 周万城

  Dielectric properties of doped silicon carbide powder by thermal diffusion SU Xiao-lei(苏晓磊), LI Zhi-min(李智敏), LUO Fa(罗 发), WANG Xiao-yan(王晓艳), ZHU Dong-mei(朱冬梅), ZHOU Wan-cheng(周万城) State Key... the aluminum and nitrogen atoms affect the bond of silicon and carbon. The dielectric real part (ε′) and imaginary part (ε") of the nitrogen-doped sample are higher than those of the other samples......

• PREPARATION AND CHARACTERIZATION OF POLY-CRYSTALLINE SILICON THIN FILM

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  来源： 《Acta Metallurgica Sinica2003年第4期》——H.Shen Z.Y.Liu Y.F.Hu L.S.Wen

  PREPARATION AND CHARACTERIZATION OF POLY-CRYSTALLINE SILICON THIN FILM H.Shen1,Z.Y.Liu2,Y.F.Hu2,L.S.Wen2 (1.Guangzhou Institute of Energy Conversion, The Chinese Academy of Sciences, Guangzhou 510070, China;2.College of Mechanical Engineering, South China University of Technology, Guangzhou 510640, China) Abstract:Poly-crystalline silicon thin film has big potential of reducing the cost......