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has been described according to semiconductor properties of sulfide minerals and electrochemical characteristics of sulfide flotation. The simple methods are put forward to calculate Fermi level... property and ion strength of solution can affect edge level of sulfide mineral. Keyword: semiconductor minerals; energy band theory; flotation; Received......
Laser-field-induced magnon amplification in a magnetic semiconductor quantum well under an external magnetic fieldPeng FengPhysics Department, University of Science and Technology Beijing, Beijing 100083, China摘 要:<正> The laser-field induced magnon amplification in a magnetic semiconductor quantum well under an external magnetic field......
Emei Semiconductor Material Factory李本成摘 要:<正> Emei Semiconductor Material Factoryincluding Emei Research Institute ofSemiconductor Material is an importantcomplex unit combining factory with insti-tute specialized in production,trial-produc-tion and scientific research of semiconductormaterials in China.It is not only a key en-terprise in China......
Microcalorimetric studies of interaction between extracellular polymeric substance and sulfide minerals ZHU Jian-yu(朱建裕)1, 2, YANG Peng(杨 鹏)1, LI Bang-mei(李邦梅)1, ZHANG Jing-xia(张静霞)1, HUANG Qiu-xia(黄秋霞)1 1. School of Minerals Processing and Bioengineering, Central South University, Changsha 410083, China; 2. Key Laboratory of Biometallurgy of Ministry of Education, Central South University......
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process in semiconductor wafer fabrication systems using extended hybrid Petri nets ZHOU Bing-hai(周炳海), PAN Qing-zhi(潘青枝), WANG Shi-jin(王世进), WU Bin(吴 斌) (School of Mechanical Engineering, Shanghai...; Abstract: To describe a semiconductor wafer fabrication flow availably, a new modeling method of extended hybrid Petri nets (EHPNs) was proposed. To model the discrete part......
Advances in Rare Earth Application to Semiconductor Materials and Devices 屠海令1 (1.National Engineering Research Center for Semiconductor Materials, General Research Institute for Nonferrous Metals,Beijing,100088,China) Abstract:The development of rare earths (RE) applications to semiconductor materials and devices is reviewed. The recent advances in RE doped silicon light emitting diodes (LED......
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Thermodynamic analysis of growth of ternary III-V semiconductor materials by molecular-beam epitaxy YE Zhi-cheng, SHU Yong-chun, CAO Xue, GONG Liang, PI Biao, YAO Jiang-hong, XING Xiao-dong, XU...; accepted 15 August 2010 Abstract: Thermodynamic models for molecular-beam epitaxy (MBE) growth of ternary III-V semiconductor materials are proposed. These models are in agreement with our......
DFT calculation on relaxation and electronic structure of sulfide minerals surfaces in presence of H2O moleculeCHEN Jian-hua(陈建华)1, 2, LONG Xian-hao(龙贤灏)1, ZHAO Cui-hua(赵翠华)3, KANG Duan(康端)2, GUO... are performed to investigate the relaxation and electronic properties of sulfide minerals surfaces (MoS2, Sb2S3, Cu2S, ZnS, PbS and FeS2) in presence of H2O molecule. The calculated results show......
