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gradient of a rolled and subsequently annealed tantalum sputtering target was investigated. The results show that by carefully controlling the rolling process, shear-related components at the surface...Through-thickness texture gradient of tantalum sputtering targetChao Deng,Shi-Feng Liu,Xiao-Bo Hao,Jing-Li Ji,Qing Liu,Hai-Yang FanCollege of Materials Science and Engineering, Chongqing University摘......
Research on fabricating technique of Ba-Al-S:Eu sputtering target丁曌1,喻志农1,张东璞1,薛唯1,王武育21. Department of Optical Engineering,School of Information Science and Technology,Beijing Institute of Technology2. Department of Mineral & Metallurgical Materials,General Research Institute for Non-Ferrous Metals摘 要:Ba-Al-S-Eu sputtering target for blue emitting......
Effect of process parameters on electrical, optical properties of IZO films produced by inclination opposite target type DC magnetron sputtering Do-Hoon SHIN1, Yun-Hae KIM2, Joong-Won...; Abstract: IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment, in which a sintered oxide......
Optimal Design of Co/In/Cu Sputtering Target Assembly Using Finite Element Method and Taguchi MethodLin Jiang1,2,Liang Zhang1,3,Zhi-Quan Liu1,21. Institute of Metal Research , Chinese Academy... corresponding to the actual air cooling process were studied, based on fi nite element simulation and Taguchi method, to optimize the sputtering target assembly. Effects of different control factors......
by modulating the target current with UBMS+PACVD method. The WC target and C2H2 were used as the sputtering target and the reaction gas, respectively. The microstructure and composition of the films were... nanocrystals. With the increase of the sputtering target current, the content of W and the binding force of the film increase to 21.9% (mole fraction) and18.6 N, respectively, while the content of ID/IG......
GROWTH OF β-SiC BY rf SPUTTERING ON SILICON SUBSTRATES E.Q.Xie1,S.Lin1,Q.Wen1,C.C.Ning1,Z.W.Ma1 (1.Department of Physics,Lanzhou University,Lanzhou 730000,China) Abstract:Rf sputtering in an Ar discharge of a SiC target has been used to deposit β-SiCfilms on Si-(111) substrates. XRD and infrared absorption spectra measurementswere used to characterize the films. The results show......
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were deposited on Si(111) substrates by RF magnetron sputtering equipment, and the compound target with 60 mm in diameter was provided by Mitsubishi Corporation. Two groups of samples were prepared... during the process of sputtering, the composition of GeSb2Te4 film, sometimes, still has certain oxygen, due to the degasification of the target clamp caused by the large quantity of heat, which......
fabricated on a JGP560C14 magnetron sputtering system (SKY Technology Development Co Ltd, CAS, China) by reactive magnetron co-sputtering from a chromium (purity of 99.2%) target simultaneously... Corrosion behaviors of Cr-Al-N coatings deposited by reactive magnetron sputtering DUO Shu-wang(多树旺)1, 2, ZHU Ming(朱 明)2, 3, LIU Ting-zhi(刘庭芝)1, LI Zhong-jun(李忠峻)1, WANG Peng(王......
as a function of the power. The growth rate of the Ag film was higher than that of the Pd film. Sputtering is the removal process of near-surface atoms from a target. The atoms of a target are able... Silver-palladium alloy deposited by DC magnetron sputtering method as lubricant for high temperature application Jung-Dae KWON1, Sung-Hun LEE1, Koo-Hyun LEE1, Jong-Joo RHA1, Kee-Seok NAM1, Sang......