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Annealing behaviors of vacancy in varied neutron irradiated Czochralski silicon CHEN Gui-feng(陈贵锋), LI Yang-xian(李养贤), LIU Li-li(刘丽丽), NIU Ping-juan(牛萍娟), NIU Sheng-li(牛胜利... complex (VO) in varied dose neutron irradiated Czochralski silicon: (S1 5×1017 n/cm3 and S2 1.07×1019 n/cm3) were studied. The results show that the VO is one of the main defects formed in neutron......
Effects of Germanium on Movement of Dislocations in p-Type Czochralski Silicon Zhao Yiying1,Yang Deren1,Li Dongsheng1 (1.State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China) Abstract:By indentation at room temperature followed by annealing at high temperatures, the pinning effect of germanium on dislocations in germanium-doped Czochralski silicon......
Defects in Fast-Neutron Irradiated Nitrogen-Doped Czochralski Silicon after Annealing at High Temperature Chen Guifeng1,Liu Lili1,Li Yangxian1,Yang Shuai1,Sun Yong1,Ma Qiaoyun1 (1.School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China) Abstract:Fast-neutron irradiated nitrogen-doped Czochralski silicon (NCZ-Si) was annealed at 1100 ℃ for different......
Influence of rapid thermal process on intrinsic gettering in fast neutron irradiated Czochralski silicon CHEN Gui-feng(陈贵锋)1, LI Yang-xian(李养贤)1, LI Xing-hua(李兴华)1, CAI Li-li(蔡莉莉)1,MA Qiao-yun(马巧... Czochralski (CZ) silicon. The effect of RTP conditions on bulk microdefects (BMDs) and denuded zone (DZ) was investigated. Fourier transform infrared absorption spectrometer (FTIR) was used to measure......
轴向磁场对硅单晶Czochralski生长过程的影响 彭岚1,余长军1,吴双应1,李友荣1 (1.重庆大学) 摘要:利用有限元方法对炉内的传递过程进行了全局数值模拟,假定熔体和气相中的流动都为准稳态轴对称层流,熔体为不可压缩流体,Cz炉外壁温度维持恒定,模拟磁场强度范围为(0~0.3)T,研究了用Czochralski(Cz)法生长单晶硅轴向磁场对熔体流动和氧传输过程的影响.结果表明:轴向磁场可有效地抑制熔体内的流动,但增大加热器功率和结晶界面处晶体内的轴向温度梯度;对于常规Cz炉,轴向磁场可增大结晶界面平均氧浓度,而对于具有气体导板的Cz炉,则会减小结晶界面平均氧浓度. 关键词:材料科学基础学科; 全局分析; 有限元方法; 硅Cz炉; 轴向磁场; [全文内容正在添加中] ......
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Oxygen Incorporation in Czochralski Growth of Silicon under a Horizontal Magnetic FieldWang Tihu Li Yingchun Qin Fu General Research Institute for Non-ferrous Metals,Beijing,100088摘 要:<正> A mechanism of oxygen transportation in Czochralski growth of silicon crystals under a horizontal magnetic field(HMCZ)is proposed.Oxygen depleted surface melt......
硅单晶Czochralski法生长全局数值模拟Ⅱ.质量传递特性 彭岚1,阮登芳1,吴双应1,李友荣1 (1.重庆大学) 摘要:使用有限元方法对炉内的质量传递过程进行了全局数值模拟,研究了硅单晶Czochralski(Cz)法生长时氧传输的基本特性.结果表明:在小型硅Cz炉中,晶体中的氧浓度主要取决于熔体的流型和气相传质速率;安装在热区的气体导板可有效强化气相传质系数并改变熔体的流型,Marangoni效应可将自由界面处低氧浓度的熔体带至结晶界面,使晶体中氧浓度降低. 关键词:材料科学基础学科; 全局分析; 有限元方法; 硅Cz炉; 质量传递; [全文内容正在添加中] ......
Numerical analysis and simulation of Czochralski growth processes for large diameter silicon crystalsTU Hailing, XIAO Qinghua, GAO Yu, ZHOU Qigang, ZHANG Guohu, and CHANG Qing National Engineering... of the melt flow in the Czochralski (CZ) crystal growth configuration, the three dimensional (3D) modeling, the simulation of melt flow under the magnetic field, the inverse modeling and the time......
Effects of argon gas flow rate and guide shell on oxygen concentration in Czochralski silicon growthREN Bingyan ZHAOLong,ZHAO Xiuling, WANG Huixian, CAO Zhongqian, ZHU Huimin,and FU Hongbo School... 650033, China摘 要:<正>φ200 mm silicon single crystals were grown in the φ450 mm hot zone of a Czochralski (CZ) furnace. By modifying the pattern......