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Preparation of free-standing diamond films for high frequency SAW devices LIU Jian-min(刘健敏)1, XIA Yi-ben(夏义本)1, WANG Lin-jun(王林军)1, SU Qing-feng(苏青峰)1, ZHAO Ping(赵 平)1, XU Run...; surface roughness; ZnO thin film; surface acoustic wave devices 1 Introduction With the development of mobile telephones, satellite broadcasting and wireless local area network systems, the demand......
Advances in Rare Earth Application to Semiconductor Materials and Devices 屠海令1 (1.National Engineering Research Center for Semiconductor Materials, General Research Institute for Nonferrous Metals,Beijing,100088,China) Abstract:The development of rare earths (RE) applications to semiconductor materials and devices is reviewed. The recent advances in RE doped silicon light emitting diodes (LED......
Photovoltaic devices employing ternary PbSxTe1-x nanocrystalsXiangxiang Zhu,Zeke Liu,Guozheng Shi,Jinan Gu,Weiwei Wang,Wanli MaInstitute of Function Nano & Soft Materials (FUNSOM), Soochow University... performance of CQD solar cells based on ternary PbSxTe1-x was reported for the first time. The photovoltaic devices using PbSxTe1-x were more efficient than either the pure PbS or the PbTe based devices......
J. Cent. South Univ. (2012) 19: 299-303 DOI: 10.1007/s11771-012-1004-7 Negative differential resistance behavior in doped C82 molecular devices XU Hui(徐慧)1, JIA Shu-ting(贾姝婷)1, CHEN Ling-na(陈灵娜)1, 2... of molecular devices constructed by C82, C80BN and C80N2 were studied. The results show that the electronic transport properties of molecular devices are affected by doped atoms. Negative differential......
Ionic liquids for electrochemical energy storage devices applicationsHuan Liu,Haijun YuCollege of Materials Science & Engineering,Key Laboratory of Advanced Functional Materials,Ministry of Education... for several energy applications, especially for clean and sustainable energy storage and conversion materials and devices. Ionic liquids exhibit high thermal and electrochemical stability coupled......
in miniaturized magnetostrictive devices. The films were fabricated on different substrates to compare their different magnetic and structural properties. It showed much more magnetostriction and higher impact......
Fabrication and Properties of Ag/Mg0.2Zn0.8O/La0.67Ca0.33MnO/p+-Si Resistive Switching Heterostructure Devices韦长成,王华,XU Jiwen,ZHANG Yupei,CHEN QisongSchool of Materials Science and Engineering... technique. The Ag/MZO/LCMO/p+-Si devices exhibit a bipolar, reversible, and remarkable current-voltage characteristic at room temperature. An obvious multilevel resistive switching effect is observed......
Organic Light Emitting Devices Based on Terbium Complex Xu Denghui1,Wang Ruifen2,Xiao Jing1,Xu Ying1,Deng Zhenbo1 (1.Institute of Optoelectronics Technology,Key Laboratory of Information Storage and Display, Beijing Jiaotong University, Beijing 100044, China;2.Department of Chemistry, Hebei Normal University, Shijiazhuang 050091, China) Abstract:Rare earth complex Tb(BA)3phen was synthesized......
Organic Light Emitting Devices Based on Terbium Complex 王瑞芬1,徐登辉2,肖静2,徐颖2,张志锋2,邓振波2 (1.Department of Chemistry,Hebei Normal University,Shijiazhuang,050091,China;2.Institute of Optoelectronics Technology,Key Laboratory of Information Storage and Display,Beijing Jiaotong University,Beijing,100044,China) Abstract:Rare earth complex TbY(m-MOBA)6(phen)2·2H2O was synthesized,which was first used......
ions often cause dispersion problems of resistive switching(RS)parameters,which is disadvantageous to devices application.In this study,ZnO/CoOx/ZnO(ZCZ)tri-layers were utilized as the switching layers to investigate their RS properties as compared with ZnO-based single-layer devices.It is interestingly noted that Pt/ZCZ/Pt devices show quite stable bipolar RS behaviors with little resistance value......