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THE EFFECTS OF SPUTTERING POWER ON STRUCTURE AND ELECTRICAL PROPERTIES OF Cu FILMS L.Q.Pan1,P.Wu1,H.Qiu1,Y.Tian1,F.P.Wang1 (1.Beijing Keda-Tianyu Microelectronic Material Technology Development Co... increases and theresistivity of the films decreases evidently with an increase in sputtering power. It isconsidered that the increase in deposition rate with sputtering power mainly weakensthe......
Trans. Nonferrous Met. Soc. China 22(2012) s729-s734 Synthesis and properties of Cr-Al-Si-N films deposited by hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and DC pulse... with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere. By varying the sputtering current of the AlSi target in the range of 0-2.5......
Dependence of characteristics of LaB6 films on DC magnetron sputtering power XU Jing(徐 静)1, 2, MIN Guang-hui(闵光辉)1, HU Li-jie(胡立杰)1, ZHAO Xiao-hua(赵晓华)1, YU Hua-shun(于化顺)1 1. School of Materials... of sputtering power on the microstructure and the bonding strength between the film and substrate were investigated. AFM observation proves that the dense films are obtained, and the surface roughness......
; Abstract: GeSb2Te4 films were deposited on Si substrates by RF magnetron sputtering, and the effects of sputtering power on the surface topography and anti-compression... that proper sputtering power is important for obtaining GeSb2Te4 films with high compact structure and low surface roughness, which present good load-support capacity. Although the effect of oxygen......
Corrosion behaviors of Cr-Al-N coatings deposited by reactive magnetron sputtering DUO Shu-wang(多树旺)1, 2, ZHU Ming(朱 明)2, 3, LIU Ting-zhi(刘庭芝)1, LI Zhong-jun(李忠峻)1, WANG Peng(王... 110016, China Received 15 July 2007; accepted 10 September 2007 Abstract: CrN and Cr-Al-N coatings were deposited by reactive magnetron sputtering on the glass substrate, and their corrosion behavior......
as a function of the power. The growth rate of the Ag film was higher than that of the Pd film. Sputtering is the removal process of near-surface atoms from a target. The atoms of a target are able... Silver-palladium alloy deposited by DC magnetron sputtering method as lubricant for high temperature application Jung-Dae KWON1, Sung-Hun LEE1, Koo-Hyun LEE1, Jong-Joo RHA1, Kee-Seok NAM1, Sang......
Influence of Sputtering Power on the Structure and Electrical Properties of Bi2Fe4O9 Thin FilmsM.Santhiya,K.S.Pugazhvadivu,K.Tamilarasan,C.RangasamiThin Film Research Laboratory, Department... in orthorhombic structure. The grain size of the grown thin films was found to increase(56–130 nm) with sputtering power. Atomic force microscopy images clearly illustrated that the grown thin films have smooth......
sputtering power of 80 W.All of the experiments prove that the atom energy determined by sputtering power plays an important role in the orientated growth of the ZnFe 2 O 4 thin films,and it matches well...Structural and magnetic properties of ZnFe2O4 films deposited by low sputtering powerJin-long Li 1,2),Zhong Yu 1),Ke Sun 1),Xiao-na Jiang 1),and Zhong-wen Lan 1) 1) State Key Laboratory of Electronic......
and expense of RF systems can be avoided since metallic targets are electrically conductive, which allows DC power to be applied. Studying the effect of sputtering pressure and annealing on optical... Effect of sputtering pressure and rapid thermal annealing on optical properties of Ta2O5 thin films ZHOU Ji-cheng(周继承), LUO Di-tian(罗迪恬), LI You-zhen(李幼真), LIU Zheng(刘 正) School of Physics......
was increased with different oxygen partial pressures of 0.20, 0.25 and 0.33 Pa, while the flux of argon was kept the same at 15 mL/min. The depositing time was 60 min and the sputtering power was 150 W...J. Cent. South Univ. Technol. (2008) 15: 449-453 DOI: 10.1007/s11771-008-0084-x Photoluminescence properties of ZnO thin films prepared by DC magnetron sputtering YANG Bing-chu(杨兵初), LIU Xiao-yan......