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Experimental A 2-inch n-type Si(100) single crystal wafer with 6 Ω?cm resistivity was used as a substrate. The substrate was chemically cleaned using hot solutions (80 ℃) of φ(NH4OH)?φ(H2O2)?φ(H2O)(=1?1?5... Abstract: A detailed investigation about the dependence of microstructure and electrical properties on annealing temperature was carried out for cerium oxide(CeO2) ultra-thin films (18 nm to 110 nm) on n......
) silicon was carried out. The samples are p+/p/n+ diodes (active area 0.25 cm2, thickness 300 μm) made of <100> MCz p-type Si wafers with the resistivity of about 2 kΩ?cm. The concentration... material is boron-doped p-type high-resistivity Cz-Si, the TD generation process can be utilized in order to produce p+/n-/n+ detectors. The last thermal process step, i.e. the sintering of aluminum......
coherent in the γ matrix and arranged regularly along the orientations. During creep, the cubical γ′ phase in [001] orientation alloy is transformed into the N-type rafted structure along...金在蠕变期间的组织演化及变形特征.结果表明:经完全热处理后,[001]和[011]取向合金中立方γ′相均以共格方式镶嵌在γ基体相中,并沿取向规则排列.蠕变期间,[001]取向合金中γ′相沿垂直于应力轴方向形成N-型筏状组织,而[011]取向合金中γ′相沿[001]取向形成纤维状筏形组织,且在(100)晶面的筏状γ′相与施加应力轴方向呈45°角排列,其中,立方γ′相不同晶面中扩张晶格的法线方向是筏状......
硼酸缓冲溶液中pH值和Cl-浓度对Cu腐蚀行为的影响王长罡1,董俊华1,柯伟1,陈楠1(1.辽宁省沈阳市科学院金属研究所金属腐蚀与防护国家重点实验室)摘 要:在硼酸缓冲溶液中,采用动电位极化,电化学阻抗谱(EIS)和半导体电容分析方法分别研究了Cu电极的极化行为及其表面人工Cu2O钝化膜的化学稳定性.结果表明,低pH值,高Cl-浓度均造成Cu2O钝化膜的破坏和溶解.高Cl-浓度时,Cu2O钝化膜的半导体性质由p型转变为n型,使Cl-更容易进入钝化膜与Cu+络合,并破坏钝化膜从而加速腐蚀.高pH值,低Cl-浓度有利于Cu2O钝化膜稳定.关键词:高放废物地质处置； Cu2O钝化膜； 稳定性； 电化学阻抗谱 (EIS)； Mott-Schottky方法......
by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type (001) Si and glass substrates at room temperature. The morphology, structure, optical, and electrical......
cause space charge sign inversion (SCSI) in the n-type silicon material, which is followed by the increase of the detector full depletion voltage (Vfd). Second, the leakage current of the detector... on n-type high resistivity silicon wafers made by Float Zone (Fz-Si) crystal growth technique. However, the low oxygen concentration in Fz-Si is a drawback since oxygen has experimentally been found......
; (3) According to Fig.1(b), for n-type Si, ...; (7) According to Fig.1(b), for n-type compensated-Si: ......
carried on other gases, but none of the rest shows high gas sensitivity. 3.3 Mechanism Indium oxide is an N-type semiconductor material with structure of bixbyite[7-8]. In the course of calcination... that indium-ions can grasp the nearby electron, which is easy to fall off, that is, it is quasi-free-electron, therefore, indium oxide is N-type semiconductor. When meeting highly oxidizing gases......
of n-type doping carbon. Pulsed laser deposition is a suitable method for preparation of DLC films with large a sp3 and sp2 ratio, showing good mechanical and optical properties. The C:N films prepared.... It was mentioned [10] that N does act as an effective n-type dopant below and up to a threshold of 1%, at higher concentration of N, carbon nitride CN films are formed. According to this comment, CN films......
, 236: 181-190. [8] YANG Jun-you, FAN Xi-an, ZHU Wen, BAO Si-qian, et al. Consolidation and thermoelectric properties of n-type bismuth telluride based materials by mechanical alloy and hot pressing [J... to n-type bismuth telluride based materials by hot extrusion [J]. Alloys and Compound, 2007, 429: 156-162. [11] NI Hua-liang, ZHU Tie-jun, ZHAO Xin-bing. Hydrothermally synthesized and hot-pressed......
