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Vacuum distillation refining of metallurgical grade silicon (Ⅱ)--Kinetics on removal of phosphorus from metallurgical grade silicon MA Wen-hui(马文会)1, 2, WEI Kui-xian(魏奎先)1, 2, YANG Bin(杨 斌)1, 2...: The kinetics on vacuum refining process of metallurgical grade silicon was studied using maximum evaporation rate, critical pressure and mean free path of phosphorus in the metallurgical grade silicon......
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冷轧用SPHC钢硅含量影响因素分析李军明1,2,杨晓江2,王书桓0,张大勇1(1.河北省唐山市河北理工大学研究生学院2.河北省唐山市唐山钢铁股份有限公司)摘 要:对LF精炼脱硫过程中回硅反应进行了热力学分析,以唐钢生产冷轧用SPHC钢为例,以实际生产数据为依据分析了影响冷轧用SPHC钢中硅含量的因素,通过降低原料中SiO2含量,减少转炉下渣,减少连铸热态浇余回收量,控制精炼后期底吹氩气强度等措施的实施,降低硅含量的效果显著. 关键词:SiO2; 增硅; SPHC钢......
; Abstract: A novel process was proposed for treating nickeliferous laterite ores with molten sodium hydroxide. The effect on silicon... temperature and NaOH-to-ore mass ratio while decreasing particle size increases silicon extraction rate. The desiliconization kinetics of nickeliferous laterite ores in molten sodium hydroxide system......
硅钼蓝分光光度法测定三氧化二砷中二氧化硅谢辉1,赖心1,黄葡英1(1.广东省广州市广州有色金属研究院分析测试中心)摘 要:研究了在三氧化二砷中加入盐酸,加热除砷,所得残渣用氢氧化钠溶解,硝酸酸化后,以钼酸铵为显色剂,在pH 0.9条件下,硅与钼酸盐形成硅钼黄络合物,用硫酸提高酸度,以抗坏血酸为还原剂,使硅形成稳定的硅钼蓝络合物,采用分光光度法测定其中的二氧化硅含量.硅钼蓝络合物最大吸收波长位于813nm处.本法相对标准偏差(RSD)为1.6%~1.9%(n=6),测定结果与ICP-AES法的结果相一致.
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50 μm)且高纯规整的纳米银线. REFERENCES [1] AURANG P, DOGANAY D, BEK A. Silver nanowire networks as transparent top electrodes for silicon solar cells[J]. Solar Energy, 2017, 141: 110-117. [2] YANG Li-shan, GU...进展, 2016(7): 545-551, 544. DUAN Sha-sha, ZHANG Ling, LI Chun-zhong. Research progress of silver nanowire-based flexible conductive[J]. Chinese Journal of Materials, 2016(7): 545-551, 544. [4] NISHI N......
Silicon assistant carbothermal reduction for SiC powdersKezhi Li, Jian Wei, Hejun Li, Chuang Wang, and Gengsheng Jiao National Key Laboratory of Thermostructure Composite Materials, Northwestern Polytechnical University, Xi’an 710072, China摘 要:The silicon assistant method to increase the reaction yield of carbothermal reduction of silica at a lower......
)Eq (i.e. the mole ratio of Si to Cl at equilibrium), and the feeding mole ratio of Cl to H (nCl/nH) was plotted in Si-Cl-H system. Then, the thermodynamics of silicon deposition process when n(TCS)/n(STC) of 1/4, 1 and 4 were studied in order to obtain the reasonable ratio of STC to TCS. The effects of temperature, pressure and feeding mole ratio of STC to TCS on silicon yield were investigated......