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Anneal and Concentration Effect on PL Properties of Sol-Gel Derived Eu3+ Doped SiO2 Glass王忆,凌浪生,朱慧群,丁瑞钦摘 要:<正>Eu3+ doped SiO2 nano-crystalline glasses were prepared by sol-gel method. The broad peak of XRD pattern indicates an amorphous SiO2 matrix. The affection of anneal time and anneal temperatures on photoluminescence (PL) properties of SiO2......
Sol-Gel Derived SiO2-Y2O3∶Eu3+ Nanocomposites and Their PL Properties王忆,刘锦淳,赖绍全,曾庆光摘 要:An improved sol-gel method was used to prepare Eu3+ ions doped SiO2-Y2O3 nanocomposites. Systematic study on the effect of post-annealling treatment on photoluminescence (PL) properties of the samples under various europium ions doping concentrations were carried out......
Concentration and annealing effect on PL properties of sol-gel derived SiO2-Y2O3:Eu3+ nanocomposites王忆1,曾庆光1,胡社军1,吴坤彬2,蒋俊宏2,陈根廷21. Institute of Thin Film and Nano Materials,Wu Yi University(Jiangmen... SiO2-Y2O3 nanocomposites.Systematic study was carried out on the effect of post-annealing treatment on photoluminescence(PL) properties of the samples under various europium ions doping concentrations.X......
Concentration and annealing effect on PL properties of sol-gel derived SiO2-Y2O3:Eu3+ nanocomposites王忆1,曾庆光1,胡社军1,吴坤彬2,蒋俊宏2,陈根廷21. Institute of Thin Film and Nano Materials,Wu Yi University(Jiangmen... SiO2-Y2O3 nanocomposites.Systematic study was carried out on the effect of post-annealing treatment on photoluminescence(PL) properties of the samples under various europium ions doping concentrations.X......
agreeable photoluminescence (PL) property and sphericity. The main emission peak appears at about 593 nm, which corresponds to 5D0→7F1 transition (magnetic-dipole transition) of the Eu3+ ion. The cell parameters and powder diffraction data were indexed. The structure of the phosphor belongs to the hexagonal system with space group P63/m. Key words:emulsion; W/O; PDP; phosphor; photoluminescence (PL......
样品进行了表征,结合光致发光(PL)谱研究了样品的PL性能,并对ZnO纳米棒及其3D组装结构的生长机理进行了简要分析.结果表明,ZnO纳米棒的直径约为300nm,长径比约为3,3D组装结构的直径约为2μm,ZnO纳米棒及其3D组装结构的生长可能与PEG模板的导向作用有关.PL谱表明样品在413~464nm内有很强的蓝光发射特性,这与样品的微观结构有很大关系.关键词:微波水热;ZnO;自组装;光致发光(PL);......
直流磁控溅射ZnO薄膜的结构和室温PL谱研究 汪雷1 (1.浙江大学硅材料国家重点实验室,浙江,杭州,310027) 摘要:ZnO是一种新型的宽带化合化半导体材料,对短波长的光电子器件如UV探测器,LED和LD有着巨大的潜在应用.本实验研究采用直流反应磁控溅射法在硅衬底上沉积C轴择优取向的ZnO晶体薄膜,薄膜呈柱状结构,晶粒大小约为100nm,晶粒内为结晶性能完整的单晶,但晶粒在C轴方向存在较大的张应力.ZnO薄膜在He-Cd激光器激发下有较强的紫外荧光发射,应力引起ZnO禁带宽度向长波方向移动,提高衬底温度有利于降低应力和抑制深能级的绿光发射. 关键词:ZnO薄膜; 张应力; 磁控溅射; 光致发光; [全文内容正在添加中] ......
photoluminescence (PL) peak wavelength is 589 nm with full width at half maximum of 70 nm, which is blue-shifted and narrower than that obtained at room temperature substrates. The narrow PL spectrum result is attributed to the uniform size of Si nanoparticles. Key words: Si nanoparticles; narrow photoluminescence peak; pulsed laser ablation; size distribution; photoluminescence (PL) ......
研究n-PS表面Al钝化后的表面结构,形貌及光致发光性能(PL),探讨Al在n-PS表面的钝化作用,并通过改变电压和时间研究钝化条件对PL性能的影响.研究结果表明:多孔硅经Al钝化后其表面结构显得更加致密均匀；与钝化前相比,其发光强度加强,约为钝化前的2倍,且分别在钝化电压为18 V及钝化时间为60 min或钝化电压为25 V及钝化时间为30 min左右时,其发光强度较高. 关键词:n型多孔硅... of pulse electrochemical in order to improve the photoluminescence (PL) performance and its stability of n-PS. Scanning electron microscopy (SEM), fourier transform infrared (FT-IR) spectroscopy......
气流量,ZnO薄膜结晶质量有所降低,半高宽从0.20°展宽至0.30°,由单一c轴取向变成无取向薄膜.同时,生成的柱状晶粒平均尺寸减少,晶粒更加均匀,均方根粗糙度减小.PL谱分析表明:随O2气流量加大,带边峰明显增强,深能级峰明显减弱,ZnO薄膜光学质量提高.这些事实说明:在本实验条件下,采用低压MOCVD方法生长的ZnO薄膜在光致发光特性主要依赖于Zn,O组份配比,而不是薄膜的微观结构质量. 关键词:ZnO薄膜; MOCVD; PL谱; [全文内容正在添加中] ......
