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water-free slurry applying for CLBO crystal chemical mechanical polishing(CMP) was investigated. The abrasive is SiO2. The influence of polishing processing parameter on polishing process for CLBO... crystal; water-free slurry; chemical mechanical polishing 1 Introduction CsLiB6O10(CLBO) is a new-type nonlinear optical crystal, which was found in 1990s[1,2]. CLBO has many good performances......
(School of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China) Abstract: With the float-pieces polisher, the effect of the stability of polishing slurries and the nanodiamond particle size on the surface quality of magnetic head was studied. The relationship between polishing procedure and the surface quality was analyzed. The surface quality of magnetic......
) ceramics during polishing and the effects of ceramic microstructure on the surface quality were also reported. Experimental results show that the second phase in SiC ceramics plays an important role... and hardness between two phases. Under 3 μm abrasive grains polishing condition, different SiC ceramics show different removal mechanisms. With decreasing abrasive grain size, all of different SiC......
Damage mechanisms during lapping and mechanical polishing CdZnTe wafersLI Yan,KANG Renke,GAO Hang,and WU Dongjiang Key Laboratory for Precision and Non-Traditional Machining Technology (Ministry of Education),Dalian University of Technology,Dalian 116024,China摘 要:CdZnTe wafers were machined by lapping and mechanical polishing processes,and their surface......
acid (HEDP), and tribasic ammonium citrate (TAC) were investigated by electrochemical techniques, X-ray photoelectron spectrometer (XPS) analysis, nano-scratch tests, AFM measurements, and polishing... polishing (ECP) illustrates the mechanism of mechanical abrasion accelerating electrochemical dissolution, that is, the residual stress caused by the mechanical wear enhances the electrochemical......
; 1 Introduction The chemical mechanical polishing (CMP) process has... [1] SEO Y J, PARK S W, KIM C B. Global planarization characteristics of shallow trench isolation-chemical mechanical polishing process with and without reverse moat etch step[J]. Journal......
Electrolyte composition and galvanic corrosion for ruthenium/copper electrochemical mechanical polishingYan-Fei Bian1,Wen-Jie Zhai1,Yuan-Yuan Cheng2,Bao-Quan Zhu11. School of Mechatronics Engineering, Harbin Institute of Technology2. School of Civil Engineering, Harbin Institute of Technology摘 要:Electrochemical mechanical polishing(ECMP)is a new......
integration technology provides the direction as well as the challenges in the fabrication of integrated circuits (IC) wafers during copper electrochemical-mechanical polishing (ECMP). These challenges... and the results are verified by experimental data.Key words:electrochemical-mechanical polishing; scratch; pad asperities; nano-scratch; model; nano-indentation......
Effect of electrochemical polishing time on surface topography of mild steelBaocheng Wang1,2) and Jinhua Zhu1) 1) State Key Laboratory for Mechanical Behavior of Metal Materials, Xi’an Jiaotong... in altitude density function (ADF) of the surface topography of mild steel during electrochemical polishing (ECP) was investigated, and the mechanism of the variation of surface roughness with polishing time......
