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热塑形方法制备N型Bi2Te3材料 张建中1,任保国1,侯旭峰1,张丽丽1 (1.中国电子科技集团公司第十八研究所,天津,300381) 摘要:本文介绍了采用热塑形方法制备N型Bi2Te3温差电材料.并且给出了所获得样品的密度,抗弯强度,SEM以及温差电性能(包括电导率和塞贝克系数)的测试结果.实验结果表明,在最佳的热塑形工艺下制备的样品的功率因子与区熔材料相当,但其机械强度要明显优于区熔材料.热压塑形样品在垂直于塑形压力的方向上具有良好的取向,并且样品在此方向上的功率因子远远大于其在平行压力方向上的功率因子值. 关键词:N型Bi2Te3材料; 热塑形; 取向; 温差电性能; N-type Bi2Te3 thermoelectric material; hot-deforming; orientation; thermoelectric performance; [全文内容正......
="ChDivSummary" name="ChDivSummary">Plasma-enhanced CVD(PECVD) epitaxy at 200℃ was used to deposit heavy doped n-type silicon films. Post-annealing by rapid thermal processing was applied to improve the properties of the epitaxial layer. By analyzing the Raman spectra and the imaginary part of the dielectric constant spectra of the samples, it was found that high-quality heavy-doped epitaxial n-type silicon......
TiO2coated on p-type Si-free SiC support showed the highest photocatalytic efficiency in degradation of 4-aminobenzenesulfonic acid(4-ABS) in aqueous solution as compared to that coated on n-type SiC... photocatalytic activity in comparison to that coated on n-type SiC foam support.The p-n heterojunctions formed between the p-type SiC supports and n-type TiO2 coatings might be able to account for the better......
and transition IIB metals such as Zn, Cd were investigated as possible n-type dopants into the Cu2 O theoretically by using the first-principles calculations based on density functional theory..., Sr, Ba and Be are more suited for n-type doping into Cu2O as shallow donors, compared to Mg which introduces a relatively deep donor level in Cu2O. Meanwhile, Zn and Cd can hardly be doped into Cu2O......
,Qingdao University摘 要:AgBi3S5 is a promising n-type thermoelectric material with low lattice thermal conductivity.In this paper,polycrystalline bulk samples of n-type Ag1-xSbxBi3S5(x=0-0.03) were prepared by high-temperature reaction and pressed by spark plasma sintering(SPS).Electrical conductivity of AgBi3 S5 is enhanced significantly due to the increased......
material was studied.X-ray diffraction analysis showedthat n-p-type materials were solid solutions based on Bi2Te3and Sb2Te3 respectively.SEM photographs proved that theboth types of materials were inhomogeneous and layer struc-ture.The values of fingure of merit for n-type and p-typematerials were 3.4×10-3 K-1,respectively.The fabricatedthermoelectric modlules made of the materials provided excel......
Optical and Electrical Properties of Hydrogenated Silicon Oxide Thin Films Deposited by PECVD沈华龙1,2,WANG Hui2,YAN Hui1,ZHANG Ming1,PAN Qingtao2,JIA Haijun2,麦耀华21. Laboratory of Thin Film Materials, College of Materials Science and Engineering, Beijing University of Technology2. Baoding Tianwei Solar Films Co., Ltd摘 要:In this work, n-type amorphous......
of electron paramagnetic resonance (EPR) technique, an investigation of the effect of dopant type and concentration on EPR signal variations was carried out by using p-type and n-type silicon(111... with p-type silicon, n-type silicon, especially with higher dopant concentration, tends to produce defect at the interface under low-energy electron irradiation with certain flux, which arises from......
of these films.While the TiN films exhibited n-type semiconductivity in all electrolytes,the Ti films only showed n-type behavior in the acidic(pH=2) and neutral(pH=7) electrolytes.The semiconductivity of the Ti films transitioned to p-type during exposure to the basic electrolyte(pH=13) after reaching 60 days.Furthermore,there was a significant increase in the donor densities for both Ti and TiN films......
" name="ChDivSummary">The electrochemical behaviors of n-type silicon wafers in silica-based slurry were investigated, and the influences of the pH value and solid content of the slurry......
