共搜索到242条信息，每页显示10条信息，共25页。用时：0小时0分1秒343毫秒
with positive slopes, indicating that both of the passive films formed on the UFG Fe-Ni-Cr alloy and the CG counterpart are n-type. The calculated donor density, Nd, at different formation potentials... and photoelectrochemistry [J]. Journal of Electrochemical Society, 1990, 137: 82-87. [22] NICIC I, MACDONALD D D. The passivity of Type 316L stainless steel in borate buffer solution [J]. Journal......
of Rs. As a direct band gap n-type semiconductor, the optical energy gap (Eg) can be determined from the (αhν)2 versus hν plot by extrapolating the linear portion of the curve to αhν=0 [17]. The optical...-textured ZnO:Al films fabricated by controlling the nucleation and growth separately for solar cell applications [J]. ACS Applied Materials and Interfaces, 2010, 2(7): 2147-2152. [13] PANICH N, SUN Y......
for the degradation of Rhodamine B under UV light irradiation. Additionally, they display superhydrophobic characteristics [7]. β-Ag2Se is an important n-type semiconductor with a narrow band gap [3]. The recent... [J]. Electrochemistry Communications, 2003, 5: 579-583. [5] BILJANA P, METODIJA N, IVAN GROZDANOV, SANDWIP K D. Chemical bath deposition of nanocrystalline (111) textured Ag2Se thin films [J......
; gas sensing; photoluminescence 1 Introduction As a nontoxic and inexpensive n-type semiconductor, ZnO offers a promising candidate for various applications, due to its exceptional properties...: 411-417. [6] YAO Z N, SUN W J, LI W X, YANG H F, LI J J, GU C Z. Dual-gate field effect transistor based on ZnO nanowire with high-K gate dielectrics [J]. Microelectronic Engineering, 2012, 98: 343-346......
the sulphur-iron ratio is less than 2, the pyrite should be a P-type semiconductor, which has high thermoelectric potential, a better floatability in alkaline medium, a worse floatability in acidity medium and is hard to be depressed by calcium ion and sodium sulphide. In contrast, while suphur-iron ratio being larger than 2, the properties above mentioned will be reversed, i.e., N-type......
based on the type of semiconductor (according to the PDM) [21]. In agreement with Mott-Schottky theory, the space charge capacitance (CSC) of a semiconductor is expressed as , n-type ... is temperature (K), NA is the acceptor density (cm-3), and ND is the donor density (cm-3). Therefore, the vs V plot should be linear with a negative slope for p-type semiconductors, while that for n......
are introduced into the energy band near the conduction band zone, which suggests that the incorporation of Au changes a p-type pyrite to an n-type pyrite. This result is consistent with the investigation... in the transformation of pyrite semiconductivity type. The calculated band-gap value suggests that the incorporated Au significantly decreases pyrite semiconductivity level, which enhances the formation......
, KRUPANIDHI S B. Comparative studies of Si-doped n-type MOVPE GaAs on Ge and GaAs substrates[J]. Material Science and Engineering B, 1998, 55(1): 53-67. [14] HUDAIT M K, KRUPANIDHI S B. Growth..., MASHINSKY V M, LIKHACHEV M E, MAVRITSKY A O, DIANOV E M, GURYANOV A N, KHOPIN V F, SALGANSKY M Y. Four-wave mixing with large Stokes shifts in heavily Ge-doped silica fibers[J]. Optics Letters, 2005, 30......
on Electron Devices, 2017, 64(5): 2030-2037. [2] LI Yunpeng, YANG Jin, WANG Yiming, et al. Complementary integrated circuits based on p-type SnO and n-type IGZO thin-film transistors[J]. IEEE Electron...和nDD分别为TA,DA,TD和DD这4种缺陷态密度分布的中心浓度；k为玻尔兹曼常数；TTA,TDA,TTD和TD分别为这4种缺陷态密度的有效特征温度；EC和EV分别为导带底(CBM)和价带顶(VBM)的能量. 考虑到InGaZnO薄膜为本征/轻掺杂N型半导体材料,影响沟道电势分布的不仅有自由载流子,而且有局域态载流子,InGaZnO TFT的沟道电势应满足泊松方程: (2) 式中......
media [J]. Metallurgical Transactions B, 1981, 12: 371-378. [23] MCMILLAN R, MACKINNON D, DUTRIZAC J. Anodic dissolution of n-type and p-type chalcopyrite [J]. Journal of Applied Electrochemistry, 1982...]. Hydrometallurgy, 2012, 111: 114-123. [12] LAZARO I, MARTINEZ-MEDINA N, RODRIGUEZ I, ARCE E, GONZALEZ I. The use of carbon paste electrodes with non-conducting binder for the study of minerals......
