共搜索到20955条信息，每页显示10条信息，共2096页。用时：0小时0分0秒671毫秒
are found. It is found that the higher the bond energy, the slower the growth rate, and the more important the plane. The analytical results indicate that (012) plane is the most influential face for the LN...Bonding Energy and Growth Habit of Lithium Niobate Single Crystals Xue Dongfeng1,Zhang Xu1 (1.State Key Laboratory of Fine Chemicals, Department of Materials Science and Chemical Engineering......
is deduced on the basis of the non-competitive inhibition of the Monod equation. The values of kinetic parameters (i.e. maximum growth rate μmax, Monod constant Km and magnesium ion inhibition constant KI...应速率也相应减小.非竞争性抑制作用的强弱取决于抑制物的绝对浓度,因而不能用增大底物浓度的办法来消除此种抑制作用. 图3 不同Mg2+浓度下T. f菌的比生长速率和动力学求解曲线 Fig. 3 Specific growth rate of T. f ((a), (b), (c), (d)) and dynamic processing curves ((a′), (b......
. A furnace for SiC sublimation growth combined with the XRD system which possessed three kinds of functions including topography, rocking curve measurement and crystal growth rate monitoring... growth rate. The in-situ growth rate monitoring also succeeded very precisely using the direct X-ray beam absorption. On the base of findings and facts obtained by the in-situ observations......
200030, China) Abstract:Crack growth rate curves are the fundamental material property for metal structures under fatigue loading. Although there are many crack growth rate curves available... is able to explain various phenomena observed with particular strong capability on load sequence effect. Key words:metal fatigue; S-N curve; crack growth rate; general constitutive relation; mean......
......
crack growth rate(CCGR) was investigated after high temperature exposure at 593, 650 and 677℃ for 2000h inAlloy 718. In addition to the coalescence of γ''/ γ" and the amount increasing of δ phase... turbine. Key words:Alloy 718; creep crack growth rate; α-Cr phase; [全文内容正在添加中] ......
), and the electron probe microanalysis (EPMA) was used to characterize the carbide composition. The results indicate that the solidification rate is the important factor governing MC carbide growth morphology, size and distribution, composition and growth mechanism. With the increase of withdrawing rate, nodular, rod-like, Chinese script types of carbide morphology are observed. For the low......
High Rate Growth of a-Si and μc-Si Thin Films with Facing-target PECVD C.T.Chou1,Z.Shi1,F.M.Zhang1 (1.Pacific Solar Pty Ltd, 82 Bay Street, Botany, NSW 2019, Australia) 摘要:The first investigation on high rate growth of uniform a-Si and μc-Si thin films with facingtarget plasma enhanced chemical vapour deposition (FTPECVD) has been presented here. It has been shown that by employing FTPECVD......
:Fine grains and slow grain growth rate are beneficial to preventing the thermal stress-induced cracking and thermal conductivity increase of thermal... from 1.69 μm to 3.92 μm,while the average grain size of La2Zr2O7 increases from 1.96 μm to 8.89 μm.Low thermal conductivity and sluggish grain growth rate indicate that high-entropy......
law of deposition characteristic along with the H2 mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H2 mole fraction, silicon growth rate... fraction is 0.8-0.85. With the growth of silicon rod height, SiHCl3 conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms......
