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THE STABILITY INVESTIGATION OF FERROELECTRIC SrBi2Ta2O9 THIN FILMS ANNEALED IN FORMING GAS A.D.Li1,N.B.Ming1,D.S.Wang1,Z.G.Liu1,D.Wu1,T.Yu1,A.Hu1 (1.National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China) Abstract:The hysteresis loop changes of ferroelecric SrBi2 Ta2 O9 (SBT) thin films (330nm) vsthe temperature of forming gas (5%o hydrogen+95%o nitrogen......
The effect of multilayer structure on magnetic properties of FePt thin films Xiaomin CHENG1,Kaifeng DONG1,Xiaofei YANG1,Weiming CHENG1,Junbing YAN1 (1.Department of Electronic Science & Technology... deviates from 1 after annealing. When Fe and Pt have the same thickness, the thinner single layer gets the lower ordering temperature and the larger coercivity. Key words:L10-FePt thin films; Multilayer......
thin films using sol-gel method. The effect of the contents of H2O and PDMS on thin films was studied. When the volume ratio of H2O to TEOS is 0.5, the optimum quality of thin films is obtained. And the gelation time is affected slightly by H2O content. Uniform thin films are obtained when the volume ratio of PDMS to TEOS is 0.2. Yet, the sol would be inactive in 6 d. Various properties of thin......
Characterization of rapid thermally processed LiMn2O4 thin films derived from solution deposition MA Ming-you(麻明友)1, XIAO Zhuo-bing(肖卓炳)1, Li Xin-hai(李新海)2, WU Xian-ming(吴显明)1, HE Ze-qiang(何则强)1... thin films were prepared through solution deposition followed by rapid thermal annealing. The phase identification and surface morphology were studied by X-ray diffraction and scanning electron......
Improvement of epitaxy and crystallinity in YBa2Cu3Oy thin films grown on silicon with double buffer of ECO/YSZ GAO Ju (高 炬)1, YANG Jian (杨 坚)2 1. Department of Physics, University... double buffer of Eu2CuO4 (ECO)/YSZ (yttrium-stabilized zirconia) was developed for growing YBa2Cu3Oy (YBCO) thin films on Si substrates. In these films, the severe reaction between Si and YBCO......
Characterization of CuInS2 thin films prepared by sulfurization of Cu-In precursor YAN You-hua(阎有花), LIU Ying-chun(刘迎春), FANG Ling(方 玲), ZHU Jing-sen(朱景森), ZHAO Hai-hua(赵海花), LI De-ren(李德仁), LU...: CuInS2 thin films were prepared by sulfurization of Cu-In precursors. The influences of the deposition sequence of Cu and In layers, such as Cu/In, Cu/In/In, and In/Cu/In, on structure, topography......
Preparation and characterization of LiFePO4 thin films as cathode materials for lithium ion battery XIAO Zhuo-bing(肖卓炳), MA Ming-you(麻明友) College of Chemistry and Chemical Engineering, Jishou University, Jishou 416000, China Received 20 April; accepted 30 June 2006 Abstract: LiFePO4 thin films were prepared by sol-gel technique. The phase and surface morphology were characterized by X-ray......
Coefficient of thermal expansion of stressed thin films WANG Zheng-dao(王正道), JIANG Shao-qing(蒋少卿) Institute of Mechanics, School of Civil Engineering, Beijing Jiaotong University, Beijing 100044, China Received 10 April 2006; accepted 25 April 2006 Abstract: A new technique was proposed to determine the coefficient of thermal expansion (CTE) of thin films at low temperature......
Phase control of magnetron sputtering deposited Gd2O3 thin films as high-κ gate dielectrics YANG Zhimin1,YUE Shoujing1,WEI Feng1,WANG Yi1,DU Jun1,TU Hailing1 (1.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China) Abstract:Gd2O3 thin films as high-κ gate dielectrics were deposited directly on Si(001) substrates by magnetron......
PREPARATION OF NANO-CRYSTALLINE Fe-Cu THIN FILMS AND THEIR MAGNETIC PROPERTIES H.B.Xu1,S.K.Gong1,K.I.Arai2,X.F.Bi1 (1.Department of Materials Science and Engineering, Beijing University of Aeronautics and Astronautics,Beijing 100083, China;2.Research Institute of Electrical Communication, Tohoku University, Japan) Abstract:Fe-Cu thin films of 0.2μm in thickness with different Cu contents were......