共搜索到16467条信息，每页显示10条信息，共1647页。用时：0小时0分0秒296毫秒
Quantiflcational Etching of AAO TemplateGuojun SONG, Dong CHEN, Zhi PENG, Xilin SHE, Jianjiang LI and Ping HAN Institute of Polymer Materials, Qingdao University, Qingdao 266071, China摘 要:etching time and the length of Ni nanowire arrays. The results indicate that the length of nanowires exposed......
-step anodization process. The porous anodic aluminum oxide(AAO) membranes were anodized in oxalic acid, which was subsequently treated with chemical etching process with 1.0 mol/L sodium hydroxide... to character the morphology and structure of the obtained alumina nanostructure. It is found that alumina nanowires are generated in the acidic chemical etching solution, while nanotube structures......
Au nanospheres modified boron-doped diamond microelectrode grown via hydrogen plasma etching solid doping source for dopamine detectionKaili Yao,Xiaojun Tan,Bing Dai,Jie Bai,Qiaoyang Sun,Wenxin Cao... and solid boron oxide powders to synthesize BDD film with microwave plasma chemical vapor deposition, so as to avoid using toxic or corrosive dopants, such as boroethane and trimethylborate......
TREATMENT OF METALS, POLYMER FILMS, AND FABRICS WITH A ONE ATMOSPHERE UNIFORM GLOW DISCHARGE PLASMA (OAUGDP) FOR INCREASED SURFACE ENERGY AND DIRECTIONAL ETCHING Z.Y.Chen1,Peter P.-Y.Tsai2,J.Reece... after exposure; the rateand uniformity of photoresist etching; and the production of sub-micron structures byOA UGDP etching at one atmosphere. Key words:atmosphere glow discharge plasma; surface......
......
: The diamond films were deposited on Si(100) and Si(111) substrates pretreated with the same acid etching process via hot filament chemical vapor deposition. The morphology, texture and residual stress...: diamond film; hot filament chemical vapor deposition; acid etching; Si
金刚石具有高硬度,高室温热导率,低的摩擦因数,良好的化学稳定性和宽波段透明等优良的理化性能,在机械,光学,电子学,化学,生物医学和纳米电子学等领域具有广阔的应用前景
......Chemical stability ofLa2O3 in La2O3-Mo cathode materials
来源： 《中国有色金属学报(英文版)2001年第5期》——王金淑 周美玲 王亦曼 聂祚仁 张久兴 左铁镛
Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growthRui Yang,Wan-qi Jie,Hang LiuState Key Laboratory of Solidification Processing... of approximately 300 cm2·V-1·s-1, and a resistivity of approximately 102 ·cm. A simple and effective method was proposed for chemical surface texturization of ZnT e using an HF:H2O2:H2O etchant. Textures......
......
......
