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Microstructure and properties of high silicon aluminum alloy with 2% Fe prepared by rheo-casting ZHONG Gu(钟 鼓), WU Shu-sen(吴树森), AN Ping(安 萍), MAO You-wu(毛有武), LI Shi-zhao(李世钊) State Key.... The semi-solid slurry of high silicon aluminum alloy was prepared by direct ultrasonic vibration (DUV) which was imposed on the alloy near the liquidus temperature for about 2 min. Then, standard test......
无取向电工钢边部减薄控制技术研究李俊洪1,李军2,邓菡3,熊旭3,邓澄3(1.四川省攀枝花市 攀枝花钢铁研究院2.攀枝花钢铁研究院,四川攀枝花 6170003.攀枝花钢钒公司,四川攀枝花 617062)摘 要:叠片系数是冷轧无取向电工钢的重要质量指标.为了提高叠片系数,必须保证无取向电工钢板形良好以及横向厚差小.针对攀钢冷轧厂4机架HC轧机轧制无取向电工钢的边部减薄问题,以无取向电工钢横向厚差最小作为目标函数,建立了一套针对无取向电工钢边部减薄控制的辊型曲线优化数学模型,开发了无取向电工钢专用辊型曲线,使无取向......
OBSERVATION ON DEFECTS IN POLYCRYSTALLINE SILICON THIN FILMS H.Shen1,Z.C. Liang2,Z.Y.Liu3,Y.F.Hu3,L.S.Wen3,L.Wang2 (1.The School of Physics and Engineering, Zhongshan University, Guangzhou... 510640,China) Abstract:Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemical vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon,poly-Si......
was poured into a near net shape gypsum mold under vibration and vacuum environment. After drying, the green body with silicon powder on it was put into sintering furnace. Heating velocity of furnace... Fabrication and test of reaction bond silicon carbide for optical applications YAO Wang(姚 旺), ZHANG Yu-min(张宇民), HAN Jie-cai(韩杰才), ZUO Hong-bo(左洪波) Center for Composite Materials, Harbin......
[4]. The current share ratio of multicrystalline silicon (mc-Si) wafer is over 50% in the silicon solar cell market and the annual production is more than 10 GW [5]. The conversion efficiency of mc... application of silicon solar cell is its high cost, in which silicon wafer occupies 40%-60%. The present raw materials of mc-Si solar cell mainly come from the head-end materials or scraps of sc-Si used......
shape. Photoresist SU8 was coated onto silicon substrates in thicknesses of 100 μm. SU8 remained on the silicon substrate while the silicon under the machined SU8 was removed after laser machining...-section shape well. Key words: femtosecond laser; SU8; silicon; sub-micron structure  ......
Annealing behaviors of vacancy in varied neutron irradiated Czochralski silicon CHEN Gui-feng(陈贵锋), LI Yang-xian(李养贤), LIU Li-li(刘丽丽), NIU Ping-juan(牛萍娟), NIU Sheng-li(牛胜利... complex (VO) in varied dose neutron irradiated Czochralski silicon: (S1 5×1017 n/cm3 and S2 1.07×1019 n/cm3) were studied. The results show that the VO is one of the main defects formed in neutron......
Experimental investigation of laser surface processing of flexure silicon nitride ceramic SUN Li1, A. P. MALSHE1, JIANG Wen-ping1, P. H. MCCLUSKEY2 1. Department of Mechanical Engineering... have significant effects on fracture behavior of flexure Si3N4 ceramic. Key words: Si3N4; silicon nitride ceramic; laser surface processing; surface integrity; flexural strength; fracture origin 1......
感应加热硅衬底上的金膜用于圆片键合 刘胜1,陈明祥1,甘志银1 (1.华中科技大学微系统研究中心,武汉,430074;2.美国韦恩州立大学机械系,密西根,48202) 摘要:选用垂直于其表面的射频磁场对镀金膜的硅片进行了感应加热,由于磁场对材料加热具有选择性,感应热量首先作用于硅片上的金膜内,硅片先被传导加热到一定温度,然后被感应加热.理论上分析了该方法的可行性,初步试验结果表明,虽然金膜厚度低于感应趋肤深度,但在没有应用感应加热基座的情况下,几秒钟内就形成了金硅共晶相.另外,升温速度快,有效减少了加热过程中金对硅的扩散影响,该方法可广泛用于微系统封装中的圆片键合. 关键词:圆片键合; 感应加热; 金-硅共晶; 微机电系统(MEMS)封装; wafer bonding; induction heating; gold - silicon eutectic; MEMS......
无取向电工钢平整工艺研究李俊洪1,李军2,樊华3,冯楷荣3,熊旭3,邓澄3(1.四川省攀枝花市 攀枝花钢铁研究院2.攀枝花钢铁研究院,四川攀枝花 6170003.攀枝花新钢钒股份有限公司,四川攀枝花 617023)摘 要:板形和表面质量是无取向电工钢的重要质量指标.为了提高叠片系数,必须保证无取向电工钢表面光滑,板形良好.针对攀钢冷轧厂普通连续退火生产线生产无取向电工钢存在的板形和表面质量问题,以带材前张应力横向分布均匀作为目标函数,建立了一套针对无取向电工钢平整机的辊型曲线及工艺参数优化数学模型,开发了无取向......