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TRANSMISSION ELECTRON MICROSCOPY INVESTIGATIONS OF LOW-PRESSURE CVD GROWTH AND STRAIN RELAXATION OF Ge ISLANDS ON Si(110) E. Spiecker1,W. J2,H.M. Lu1,L. Vescan3,L.Zhang1 (1.a;2.a)ger(a;3.Institute... chemical vapour deposition (LPCVD) of Ge at 700℃ onto Si(110) substrates have been investigated for different nominal Ge coverage by transmission electron microscopy (TEM)of plan-view and cross......
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A yttrium-containing high-temperature titanium alloy additively manufactured by selective electron beam meltingLU Sheng-lu(逯圣路)1, 2, 3, TANG Hui-ping(汤慧萍)2, M. Qian(马前)2, 4, HONG Quan(洪权)2, ZENG Li... alloy (Ti-6Al-2.7Sn-4Zr-0.4Mo-0.45Si-0.1Y, mass fraction, %) has been additively manufactured using selective electron beam melting (SEBM). The resulting microstructure and textures were studied using......
Analysis of Valence Electron Structure in Compound Layer of Steel 42CrMo Plasma Nitrided with Rare Earth Addition LIU Zhan-hong1,WU Kun1,DAI Ya-nan1,YAN Mu-fu1 (1.School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, China) 摘要:The valence electron structure (VES) in compound layer of steel plasma-nitrided at 560℃ with rare earth (RE)addition was calculated based......
1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor depositionGAO Cheng(高成)1, LI Hai-ou (李海鸥)2, HUANG Jiao-ying(黄姣英)1, DIAO Sheng-long(刁胜龙)1(1...)Abstract:InGaAs high electron mobility transistors (HEMTs) on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition (MOCVD). room temperature Hall......
Article ID: 1003-6326(2005)05-0978-07 Improvement of wear resistance of AZ31 and AZ91HP by high current pulsed electron beam treatment GAO Bo(高 波)1, 2, HAO Sheng-zhi(郝胜智)2, DONG Chuang(董 闯)2, TU Gan-feng(涂赣峰)1 (1. School of Materials and Metallurgy, Northeastern University, Shenyang 110004, China; 2. State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams......
Numerical simulation of thermal-mechanical process of Al-Si-Pb alloy treated by high current pulsed electron beam L? Xiao-xia(吕晓霞), LI Rong-guang(李荣广), AN Jian(安 健) Key Laboratory... irradiated by high current electron beam (HCPEB) reveals three distinct regions: a molten zone, an overlapped zone of heat-affected and quasistatic thermal stress-affected zone, and a transition zone......
Microstructures and high temperature mechanical properties of electron beam welded Inconel 718 superalloy thick plateGAO Peng1, ZHANG Kai-feng1, ZHANG Bing-gang2, JIANG Shao-song1, ZHANG Bao-wei1(1... of Technology, Harbin 150001, China)Abstract:The microstructures and high temperature mechanical properties of whole and slices in Inconel 718 thick plate joint obtained by electron beam welding (EBW) were......
AlGaN/GaN High Electron Mobility Transistors for High-Power and Low-Noise Applications Dabiran Amir M1,Chow Peter P1,Hartmann Ralf1,Wang Xiaoguang1 (1.SVT Associates, 7620 Executive Drive, Eden Prairie MN 55344, USA;2.Superior Vacuum Science & Technology Shenyang Ltd., Shenyang 110179, China) Abstract:The paper different aspects of MBE growth of nitride-based high electron mobility transistor......
Electron beam welding of Ti-15-3 titanium alloy to 304 stainless steel with copper interlayer sheet WANG Ting(王 廷), ZHANG Bing-gang(张秉刚), CHEN Guo-qing(陈国庆), FENG Ji-cai(冯吉才), TANG Qi(唐 奇) State Key Laboratory of Advanced Welding Production Technology, Harbin Institute of Technology,Harbin 150001, China Received 27 November 2009; accepted 22 March 2010 Abstract: Electron beam welding......
