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FORMATION OF MANGANESE SILICIDE THIN FILMS BY SOLID PHASE REACTION E.Q.Xie1,W.W.Wang1,D.Y.He1,N.Jiang1 (1.Department of Physics,Lanzhou University,Lanzhou 730000,China) Abstract:Manganese silicide MnSi2-x thin films have been prepared on n-type silicon substratesthrough solid phase reaction. The heterostructures were analyzed by X-ray diffraction,Rutherford backscattering spectroscopy, Fourier......
between resistivity of n-type epitaxial layer and the concentration and flow of PCl3 doping source under a certaingrowth condition has also been found.The optimum condition for precise control of parameters......
="ChDivSummary">We reported a facile preparation of a uniform decoration of spherical n-type SnO2 by p-type CuO nanopa rticles as well as their utilization for enhanced performance on toluene gas detection.CuO... that was beneficial for a uniformly electrostatic self-decoration between positively charged p-type CuO nanoparticles and negatively charged n-type spherical SnO2.Interestingly,CuO was partially reduced to Cu......
and changing the semiconductor type of PbS from p-type to n-type. Vacancy defects change the electric populations and the movement states of electrons,which results in the change of flotation...,计算含有硫空位和铅空位的方铅矿的电子结构,并讨论空位缺陷对方铅矿可浮性的影响.计算结果表明,铅空位缺陷使方铅矿费米能级降低,带隙变窄；而硫空位缺陷则使方铅矿费米能级升高,带隙变宽,同时,方铅矿的半导体类型由p型变为n型.空位缺陷引起的电荷布居数变化改变晶体中电子运动的状态,从而影响方铅矿的浮选行为. 关键词:方铅矿；空位缺陷；密度泛函理论；浮选 中图分类号:TD923.13 ......
results show that the TE properties are controlled by the temperature and carrier concentrations.P-type doping of TAlO2(T=Cu,Ag and Au) compounds has better TE figure of merit(ZT) than n-type doping.High......
electron microscopy.The electrical resistivities and Seebeck coefficients of those samples were measured in the temperature range of 300-723 K,and the samples of SmxCo4Sb12 showed n-type......
to confirm the phase composition of the powders. All the samples are orthorhombic structure. The unit cell volume and grain size decreased with an increase of Co content x. The conduction type of the NdFe1–xCoxO3 perovskite oxides changed with the increasing Co content x. When x<0.3, the oxides showed p-type conduction behavior, and then changed to n-type when x>0.3. All the sensors presented......
dependences of electrical resistivity, Seebeck coefficient and thermal conductivity were measured on these compounds in the range of 300-723 K. All samples showed n-type conduction. The thermal......
by microstructural and electrochemical analysis. The oxide film formed at 573 K is iron-rich oxide and it exhibits an n-type semiconductor at a higher potential than 0.35 V and a p-type semiconductor at a lower......
particle size of tens of nanometers. The bulk material was prepared by hot pressing the powders. Transport property measurements indicated a heavily doped semiconductor behavior with n-type conduction......
