共搜索到4789条信息,每页显示10条信息,共479页。用时:0小时0分0秒230毫秒
......
......
carbide coatings for carbon fiber reinforced carbon (CFC) and carbon fiber reinforced silicon carbide (C/SiC). SOURDIAUCOURT et al[7, 8] and ODDISOURDIAUCOURT et al[9] studied the depos- ition... Hafnium carbide structural foams synthesized from polymer precursors FAN Hai-bo, YANG Hong, N. K. RAVALA, H. C. WIKLE III, R. H. ZEE, B. A. CHIN 275 Wilmore Labs Auburn University, Auburn, AL......
and should not be neglected. Key words: silicon carbide fiber; excess carbon layer; specific resistivity 1 Introduction Polymer-derived SiC fiber is highly valued because of its excellent heat-resistance... D, MARTIN H P, M?LLER E, ROEWERB G, HOELL A. Crystallization of polymer derived silicon carbide materials [J]. J Eur Ceram Soc, 1998, 18(13): 1885-1891. [14] MONTHIOUX M, DELVERDIER O. Thermal......
......
......
一种具有稳定富碳表层的SiC纤维的制备与性能 毛仙鹤1,王得印1,宋永才1,王应德1 (1.国防科技大学,新型陶瓷纤维及复合材料重点实验室,长沙,410073) 摘要:采用不饱和烃不熔化处理后的聚碳硅烷(PCS)纤维经高温烧成可制得一种新型的SiC纤维,纤维的抗张强度达2.5~2.8GPa,氧含量4wt%~6wt%,电阻率仅为0.5Ω·cm左右,大大低于采用传统空气不熔化方法得到的SiC纤维.研究表明:该纤维表面存在厚度约50nm的富碳层,并且在Ar气中进行高温热处理后,表面富碳层结构无明显变化.与日本通用级SiC纤维Nicalon NL202 相比,纤维的耐热性提高200~300℃.纤维具有低电阻率稳定性,从室温到1600℃,其电阻率始终保持在0.4~0.8Ω·cm. 关键词:SiC纤维; 富碳; 电阻率; silicon carbide fiber; excess......
Effect of Graphene Nanoplate and Silicon Carbide Nanoparticle Reinforcement on Mechanical and Tribological Properties of Spark Plasma Sintered Magnesium Matrix CompositesAniruddha Das,Sandip... reinforced with low reinforcement content(up to 4-5 vol.%)of graphene nanoplates(GNPs) and silicon carbide(SiC) nanoparticles using ball milling and spark plasma sintering(SPS) is reported. Near full......
, China) Abstract: The elemental requirements for electronic packaging substrate materials are summarized. The characteristics of alumina, aluminum nitride, beryllium, silicon carbide, silicon nitride... ceramics; silicon carbide ceramics; silicon nitride ceramics; tape casting; gel-casting  ......
电感耦合等离子体原子发射光谱法测定碳化硅中杂质元素姚永生1(1.河南省安阳市河南省有色金属地质矿产局第一地质大队)摘 要:提出了使用电感耦合等离子体原子发射光谱同时测定碳化硅中微量Fe,Al,Ti,Ca,Mg,P,Mn的分析方法.样品用无水碳酸钠与硼酸混合熔剂熔融,硝酸提取,甲醇除硼,氢氟酸挥硅,然后在选定的仪器工作条件下测定.使用基体匹配法来校正基体的干扰.各元素的测定检出限为0.001~0.054μg/mL,相对标准偏差(RSD,n=9)为0.5%~3.7%.经比对试验证明,本法测定值与其他方法测定值相符合......