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properties and electrical properties of the thin film are improved with the increase of sputtering power. Key words: Cu2ZnSnS4; reactive magnetron; alloy target; absorbing layer; solar cell 四元化合物... cell[J]. Sol Energ Mat Sol C, 2011, 95(6): 1421-1436. [2] Ahmed S, Reuter K B, Gunawan O, et al. A high efficiency electrodeposited Cu2ZnSnS4 solar cell[J]. Advanced Energy Materials, 2012, 2(2......
an increase in energy gap value of 3.4 eV.By employing the formed ZNTs as the photo-anode for a dye-sensitized solar cell (DSSC), a full-sun conversion efficiency of 1.01% was achieved with a fill factor...Photoanode Activity of ZnO Nanotube Based Dye-Sensitized Solar CellsR. Ranjusha,P. Lekha,K.R.V. Subramanian,V. Nair Shantikumar,A. Balakrishnan摘 要:Vertical......
on technological optimization of SSP prepared from electronic grade silicon powder, SSP solar cell devices with simple structure are prepared and the effect of SSP substrate is discussed. Up to now...SUBSTRATE MATERIALS FOR POLY-CSiTF SOLAR CELLS:OPTIMIZATION OF SILICON SHEET FROM POWDER X.W. Zou1,H.Shen2,Z.C. Liang1,Q. Ban2,X.J. Wang1 (1.Guangzhou Institute of Energy Conversion, The Chinese......
saving and pollutants decreasing. WANG et al [23] studied the thermodynamic performance of a fuel cell tri-generation system as displayed in Figure 4, which consisted of a solar heat collection system... J. Cent. South Univ. (2020) 27: 1074-1103 DOI: https://doi.org/10.1007/s11771-020-4352-8 Hydrogen generation from methanol reforming for fuel cell applications: A review SUN Zhao(孙朝), SUN Zhi-qiang......
of about 0.1 ohms/cm2. A GaInP/GaAs//InGaAsP/InGaAs 4-junction solar cell was prepared with the high efficiency of 34.4%(AM0)at 1 sun.关键词:...Improvement on the interface properties of p-GaAs/n-InP heterojunction for wafer bonded four-junction solar cellsMengyan Zhang1,2,Tao Ning3,Jie Chen2,Lijie Sun2,Lihua Zhou21. Department of Electronic......
and Chemical Engineering, Southwest Petroleum University摘 要:CsPbI2Br is an ideal inorganic perovskite material with a reasonable bandgap for solar cell...Ultra-smooth CsPbI2Br film via programmable crystallization process for high-efficiency inorganic perovskite solar cellsFu Zhang1,Zhu Ma1,Taotao Hu1,Rui Liu1,Qiaofeng Wu1,Yu Yue1,Hua Zhang1,Zheng......
vapor phase epitaxy (MOVPE) growth of indium gallium nitride (InGaN) has been discussed in detail towards the fabrication of solar cell. The InGaN film with In contents up to 0.4 are successfully... fabricated on thick GaN template with higher In content. The In0.25Ga0.75N n+-p junction solar cell is found better performance with an op-n circuit voltage of 1.5 V and the short circuit current......
文献标志码:A Influence of crystalline silicon substrate parameters on solar cell output properties LI You..., minority carrier lifetime and doping density on the solar cell output properties were simulated by PC1D. The results show that the influence of substrate thickness on the output properties is related......
Improved photovoltaic performance of dye-sensitized solar cells by carbon-ion implantation of tri-layer titania film electrodesJun Luo1,Wei-Guang Yang1,Bin Liao2,Hai-Bo Guo1,Wei-Min Shi1,Yi-Gang... structure films were modified by C-ions implantation for improving the photovoltaic performance of dye-sensitized solar cells(DSSCs), in which the structure of TiO2 changes from rutile to anatase......
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