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Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer DepositionYing-Feng He,Mei-Ling Li,San-Jie Liu,Hui-Yun Wei,Huan-Yu Ye,Yi-Meng Song,Peng Qiu,Yun-Lai An,Ming-Zeng Peng,Xin-He ZhengSchool of Mathematics and Physics,Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science,University of Science and Technology Beijing摘 要:
Properties of multilayer gallium and aluminum doped ZnO(GZO/AZO) transparent thin films deposited by pulsed laser deposition process Jin-Hyun SHIN, Dong-Kyun SHIN, Hee-Young LEE, Jai-Yeoul LEE Department of Materials Engineering, Yeungnam University, Gyongsan 712-749, Korea Received 21 April 2010; accepted 10 September 2010 Abstract: Multilayer gallium and aluminum doped ZnO (GZO/AZO) films......
Selectively recovering scandium from high alkali Bayer red mud without impurities of iron, titanium and gallium刘召波,宗燕兵,李宏煦,贾东民,赵子晗School of Metallurgical and Ecological Engineering University... temperature, leaching time and liquid to RM solid ratio on the leaching rates of calcium, iron, aluminum, silicon, sodium, titanium, scandium and gallium were studied and analyzed, suggesting......
Selectively recovering scandium from high alkali Bayer red mud without impurities of iron, titanium and gallium刘召波,宗燕兵,李宏煦,贾东民,赵子晗School of Metallurgical and Ecological Engineering University... temperature, leaching time and liquid to RM solid ratio on the leaching rates of calcium, iron, aluminum, silicon, sodium, titanium, scandium and gallium were studied and analyzed, suggesting......
碳热法合成具有蓝光发射特性的氧化镓纳米线,纳米带和纳米片 叶瑛1,程继鹏1,张孝彬1,孔凡志1,陶新永1 (1.浙江大学,浙江,杭州,310027) 摘要:利用碳纳米管通过碳热法合成了氧化镓纳米线,纳米带和纳米片.采用扫描电镜和透射电镜对其进行了形态和结构表征.合成的氧化镓纳米结构是单晶体.室温光致发光谱分析发现,氧化镓纳米晶在蓝光区域487 nm处产生明显的发射峰. 关键词:氧化镓; 碳纳米管; 纳米结构; 光致发光谱; gallium oxide; carbon nanotubes; nanostructures; photoluminescence; [全文内容正在添加中] ......
Separation of indium (Ⅲ), gallium (Ⅲ), and zinc (Ⅱ) with Levextrel resin containing di(2-ethylhexyl) phosphoric acid (CL-P204): Part I. Selection of separation conditionsLIU Junshen , HE Zhengguang... of indium (Ⅲ), gallium (Ⅲ), and zinc (Ⅱ) from aqueous sulfate solution with Levextrel resin containing di(2-ethylhexyl) phosphoric acid (CL-P204). The aim of the research is to collect preliminary......
Erratum:Atomic Emission Spectrographic Analysis of High-purity Gallium with Prior Partial Dissolution of Matrix [RARE METALS,11(1992),No.2,129,130]Chen Jiaying Zhong Xiuxia General Research Institute for Non-ferrous Metals,Beijing 100088 Liang Shuquan Institute of Chemistry,Academia Sinica,Beijing 100080摘 要:<正> (1)The correct writting of the fifth......
annealing processes, respectively. These topics were illustrated in the paper by examples of modeling and experimental results of bulk growth of silicon (Si), gallium arsenide (GaAs), indium phosphide (InP......
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47.66%(质量分数);其Ga和Ge的含量分别为0.266%和0.362%(质量分数). 表1 锌粉置换镓锗渣主要化学成分 Table 1 Main composition of zinc powder replacement residue containing gallium and germanium (mass fraction, %) 表2 锌粉置换镓锗渣中镓锗物相的化学分析结果 Table 2 Gallium and germanium phases in zinc powder replacement residue containing gallium and germanium by chemical analysis (mass fraction, %) 图1 锌粉置换镓锗渣XRD谱 Fig. 1......