共搜索到18096条信息,每页显示10条信息,共1810页。用时:0小时0分0秒291毫秒
Bulk single crystal growth of SiGe by PMCZ methodZHANG Weilian, NIU Xinhuan, CHEN Hongjian, ZHANG Jianxin, SUN Junsheng, and ZHANG EnhuaiSemiconductor Material Institute, Hebei University..., thermal convection in melt and centrifugal pumping flows due to crystal rotation could be strongly suppressed so that the fluctuations of temperature and micro-growth rate at solid/liquid interface......
of anisotropy coefficients, the dendrites grow faster under the same condition. Key words: anisotropy; dendrite growth; crystal morphology; phase field method  .../liquid interface, and it is a key parameter affecting the evolution of crystal morphology. As long as free dendrites form stable morphology of tip, it must have anisotropy. At the same time, the growth......
; Abstract: The influence of crystallographic orientation on the void growth in FCC crystals was numerically simulated with 3D crystal plasticity finite... properties is necessary to better understand void growth at the micron length scale. Recently, crystal plasticity theory has been used to simulate void growth and coalescence, and most......
Preparation of anhydrous lanthanum bromide for scintillation crystal growth张彤,李红卫,赵春雷,余金秋,胡运生,崔磊,何华强摘 要:This paper reported an efficient and economical method for preparation of anhydrous LaBr3 for scintillation crystal growth. High purity anhydrous LaBr3 powders in large quantities were successfully obtained by stepped dehydration of LaBr3·7H2O using......
Preparation of anhydrous lanthanum bromide for scintillation crystal growth张彤,李红卫,赵春雷,余金秋,胡运生,崔磊,何华强摘 要:This paper reported an efficient and economical method for preparation of anhydrous LaBr3 for scintillation crystal growth. High purity anhydrous LaBr3 powders in large quantities were successfully obtained by stepped dehydration of LaBr3·7H2O using......
Study on Growth and Spectra Properties of Nd: GGG Crystal Liu Jinghe1,Sun Jing1,Zhang Ying1,Zeng Fanming1 (1.School of Materials Science, Changchun University of Science and Technology, Changchun 130022, China) Abstract:The laser crystal Nd: GGG was grown by Cz method. The optimum processing parameter is that the pulling rate is 2~4mm·h-1, the rotation rate is 20~40 r·min-1 and the cooling......
Growth of High Quality Semi-Insulating InP Single Crystal by Suppression of Compensation Defects Zhao Youwen1,Yang Zixiang1,Sun Wenrong1,Duan Manlong1,Dong Zhiyuan1 (1.Institute of Semiconductor... between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated......
. The influence of composition on equiaxed crystal growth mechanisms and grain size in Al alloys [J]. Z Metallk, 1996, 87: 216-226.  ... Growth restriction effects during solidification of aluminium alloys CHEN Zhong-wei(陈忠伟), HE Zhi(何 志), JIE Wan-qi(介万奇) State Key Laboratory of Solidification Processing......
Growth and optical properties of Pr3+:La2CaB10O19 crystal祖延雷1,2,张建秀1,傅佩珍1,吴以成11. Beijing Center for Crystal Research and Development,Key Laboratory of Functional Crystals and Laser Technology,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences2. Graduate School of the Chinese Academy of Sciences摘 要:Pr3+ doped La2CaB10O19 crystal......
. The results showed that the apparatus was very suitable for industrial growth of YSZ crystals. Key words:yttria-stabilized cubic zirconia; crystal growth; skull melting process; rare earths; [全文内容...Industrial growth of yttria-stabilized cubic zirconia crystals by skull melting process XU Jiayue1,HE Qingbo1,JIANG Xin3,FANG Yongzheng1,LEI Xiuyun2,HE Xuemei1,ZHANG Daobiao1 (1.School of Materials......