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technique on AISI 52100 steel in salt bath at 1 123 K, 1 173 K, and 1 223 K for 1, 2, 4, and 6 hours. The salt consisted of borax, sodium fl uoride, boron carbide, and niobium pentoxide. The presence...Growth Characteristics and Kinetics of Niobium Carbide Coating Obtained on AISI 52100 by Thermal-reactive Diffusion Technique严绍进1,王洪福1,2,SUN Qikun2,HE Peng2,PANG Chengang3,WANG Huachang2,WANG......
with the prolonging time. Key words:high temperature sintering; phase constitution; gadolinium boride; boron carbide; gadolinium oxide; rare earths; [全文内容正在添加中] ......
Effect laws and mechanisms of different temperatures on isothermal tensile fracture morphologies of high-strength boron steelLIU Jia-ning(刘佳宁)1, SONG Yan-li(宋燕利)2, 3, LU Jue(路珏)1, GUO Wei(郭巍)2, 3(1...), Wuhan 430070, China;3. School of Automotive Engineering, Wuhan University of Technology, Wuhan 430070, China)Abstract:The fracture behaviour and morphologies of high-strength boron steel were......
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of boron carbide by magnesium reducing-SHS[J]. Journal of Northeastern University(Natural Science), 2003, 24(10): 936-939. [6]豆志河, 张廷安, 侯闯, 等. 自蔓延高温合成CaB6的基础研究[J]. 中国有色金属学报, 2004, 14(2): 322-326. DOU...; 文献标识码: A Preparation of boron powder by self-propagating high temperature synthesis metallurgy DOU Zhi-he, ZHANG Ting-an (College of Materials & Metallurgy, Northeastern University......
碳化硼薄膜制备的研究进展 廖志君1,伍登学1,范强1 (1.四川大学物理系和辐射物理及技术教育部重点实验室,成都,610064) 摘要:综述了碳化硼材料的主要性能和制备碳化硼薄膜的主要方法,讨论了包括磁控溅射,离子束沉积和化学气相沉积等制备方法的优点及重要工艺参数,并就各方法指出了提高薄膜性能的主要措施,指出制备出更均匀,致密的碳化硼薄膜,提高薄膜与基体间的结合力,降低薄膜应力仍是今后研究的重点. 关键词:碳化硼; 薄膜; 性能; 制备方法; boron carbide; thin film; properties; fabrication method; [全文内容正在添加中] ......
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SPS制备致密碳化硼陶瓷的结构及性能 王岭1,仝建峰1,陈大明1,张虎1 (1.北京航空材料研究院,北京,100095) 摘要:以富硼碳化硼粉体为原料,采用放电等离子烧结(SPS)制备致密碳化硼陶瓷体,研究了SPS工艺对碳化硼陶瓷结构和性能的影响.结果表明,SPS烧结工艺可以低温快速烧结得到致密度达到99.7%的碳化硼陶瓷体,烧结温度和烧结时间对碳化硼的致密度和晶粒尺寸都有影响.烧结过程中样品晶粒表面产生玻璃相,玻璃相的存在使碳化硼断裂机制由穿晶断裂过渡为沿晶断裂,有助于提高材料断裂强度和断裂韧性.SPS制备的致密碳化硅陶瓷材料具有良好的力学性能,其中致密度达到99.6%,抗弯强度达到550.1 MPa,硬度39.52 GPa. 关键词:碳化硼; SPS; 致密度; 断裂机制; boron carbide; SPS; densification; fracture type......
Synthesis and microwave dielectric properties of boron doped SiC powder by sol-gel method LI Zhi-min(李智敏), LUO Fa(罗 发), SU Xiao-lei(苏晓磊), ZHU Dong-mei(朱冬梅), ZHOU Wan-cheng(周万城) State Key... ℃, and that there are not the characteristic peaks of any boride in the XRD patterns, which indicates that the boron is available only on the crystallization of 3C-SiC. The Raman spectra of the samples also show the characteristic bands......
IMPROVEMENT OF TYPE IV CRACKING RESISTANCE OF 9Cr HEAT RESISTING STEEL WELDMENT BY BORON ADDITION T.Watanabe1,F.Yin1,M.Kondo1,M.Tabuchi1,F.Abe1,H.Hongo1 (1.National Institute for Materials Science... voids and cracks on grain boundaries in fine-grained heat affected zone (HAZ). Because boron is considered to suppress the coarsening of grain boundary precipitates and growth of creep voids, we have......