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controlled by film diffusion in some cases [21]. It can be seen from Fig. 7 that the plots of qt versus t1/2 did not pass through the origin. Hence, intraparticle diffusion is not the only rate......
of passive film and resulted in a weakened corrosion barrier to protect the substrate during tests. Figure 6 Tafel curves (a), Nyquist EIS spectra (b), fitted equivalent circuit (c), bode diagrams (d) of Fe......
coefficient of the samples show a downward trend. Because the hardness of Ti185 is much smaller than that of the grinding ball GCr15, the initial film layer is easily damaged during the grinding process......
detectors of secondary and backscattering electrons and a vacuum sample chamber with a vacuum of lower than 4×10-4 Pa. Prior to imaging, the samples were sputtered with a 12 nm thin film of chrome. Figure 1......
strain directions on the phase transformation of zirconium film by MD method. In this study, MD simulation was used to study the effect of temperature on the microstructure and mechanical performance... in the strained ultrathin copper film: A molecular dynamic simulation study [J]. Materials Chemistry and Physics, 2019, 223: 171-182. DOI: 10.1016/j.matchemphys.2018.09.045. [35] TANG F, JIAN Z, XIAO S, LI X, HU W......
Pu-yu, CHEN Zong-kun, HUANG Ming-hua. An electrodeposited cobalt–selenide-based film as an efficient bifunctional electrocatalyst for full water splitting [J]. Journal of Materials Chemistry A, 2016......
, 28(8): 2436-2450. DOI: https://doi.org/10.1007/s11771-021-4778-7. 1 Introduction The semiconductor manufacturing process is complex, precise and requires multiple processes, such as film deposition......
electron-injection architecture featuring a silver nanoparticle (AgNPs) interlayer-modified sol-gel-derived transparent zinc oxide (ZnO) ultrathin film is proposed (Figure 2(a)) [17]. The optimized... thin-film transistors (TFTs) such as oxide TFTs. An inverted device structure rather than the conventional structure is preferred for future QLEDs, because the transparent indium tin oxide (ITO......
DOI:10.19476/j.ysxb.1004.0609.2019.09.13 能源光电转换与大规模储能二次电池关键材料的研究进展 梁叔全1,程一兵2, 3,方国赵1,曹鑫鑫1,沈文剑2,钟 杰2,潘安强1,周 江1 (1. 中南大学 材料科学与工程学院,长沙 410083； 2. 武汉理工大学 材料复合新技术国家重点实验室,武汉 430070； 3. Department of Materials Engineering, Faculty of Engineering, Monash University, VIC3800, Australia) 摘 要......
influences etch rate by its microstructure, film stress, impurities in or on the material itself. VARTULI[70] reported a decrease in etch rates with increasing crystal quality, as the reactions occurred......
