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MoO3的复合改性及光致发光与光催化性质宋继梅,杜永芳,梅雪峰,孟非凡,张恩贡,刘赛赛安徽大学化学化工学院功能无机材料化学安徽省重点实验室摘 要:采用室温液相陈化法制备了复合WO3的MoO3粉体,利用XRD,XPS,UV-Vis和PL光谱对合成产物进行了表征,以太阳光为光源对有机染料结晶紫进行了光催化降解研究.UV-Vis漫反射光谱和PL光谱分析结果表明,适量WO3的复合,能够改善MoO3对光的吸收,降低MoO3的PL光谱强度;当WO3复合量为5%时,复合物的PL光谱强度最低,结晶紫溶液的脱色率为89.12%,COD去除率为87.2%.关键词:MoO3;WO3;光致发光;光催化;复合;......
纳晶硅氧化层中的陷阱态(英文)黄伟其1,秦朝建2,许丽1,吴克跃11. 贵州省光电子技术与应用重点实验室2. 中国科学院地球化学研究所摘 要:由Si-H键钝化的多孔硅的光致荧光(PL)发光频移遵循量子受限效应,随着纳米结构尺寸的变小PL发光频率从红外蓝移到紫外.多孔硅被氧化后,PL发光带的中心波长被钉扎在700nm750nm范围,且强度明显增加.计算表明,氧化后的Si=O键或Si-O-Si键能在展宽的导带下方形成电子陷阱态.由此提出量子受限与氧化陷阱态模型可以很好地解释PL发光的钉扎和增强效应.该模型中的电子陷阱态扮演了重要的角色.关键词:光致荧光;多孔硅氧化;钉扎和增强效应;电子陷阱态;......
化剂,采用XRD,PL,DRS和BET等技术进行了催化剂表征.在光源为高压汞灯和氙灯,Fe3+为电子受体,悬浮液的pH值为2.0的条件下,考察Nb5+的掺杂量对r-TiO2粒子的光催化分解水析氧活性的影响,并探讨了掺杂催化剂的DRS,PL光谱与光催化活性的关系.结果表明:Nb5+的掺杂量在0.5%~3.0%范围时,Nb5+掺杂没有引起r-TiO2的晶型改变,表面形成氧空位,在导带底附近形成施主能级,有利于光生电子和空穴的分离,掺杂催化剂光催化活性增强；掺杂催化剂光致发光强度与其光催化析氧活性的变化趋势一致,Nb5+掺杂量在1.0%(摩尔分数)时,PL光谱强度最大,光催化析氧活性最高,紫外光源和可见光源析氧速率分别达480 μmol/(L?h)和78 μmol/(L?h)；Fe3+的初始浓度为8.0 mmol/L时,催化剂析氧活性最高. 关键词:掺杂Nb5+；r-TiO2；光催化；析氧......
射电镜(TEM)和光致发光(PL)等手段对产品的结构和性能进行分析和表征.研究结果表明:多面体Y1-xDyxVO4纳米晶均为单晶结构,其颗粒粒径为20~200 nm；PL光谱显示,随着退火温度的提高,多面体Y1-xDyxVO4纳米晶具有比不规则Y1-xDyxVO4纳米颗粒更好的荧光性和较好的晶化度,但产品的Y/B(黄光强度与蓝光强度的比值)和色纯度下降. 关键词:水热合成；Y1-xDyxVO4多... spectroscopy. The results show that these polyhedrons with average particle size of 20 to 100 nm represent typicle single crystal structures. The photoluminescence (PL) measurements reveal that polyhedron......
Zn取向对氧化法制备ZnO薄膜光致发光性能的影响研究任树洋,任忠鸣,任维丽上海大学材料科学与工程学院摘 要:先利用电阻加热真空蒸发法制备(101)和(002)优先取向的金属Zn薄膜,而后氧化处理制备ZnO薄膜.并对制备的ZnO薄膜进行了XRD,SEM,紫外-可见光吸收谱和光致发光(PL)分析.XRD结果显示制备的ZnO薄膜中有未完全氧化的金属Zn.吸收谱结果发现未完全氧化的ZnO薄膜具有强烈的紫外吸收.PL谱结果显示该法制备的ZnO薄膜具有很高的PL强度,而且(101)前驱金属膜制备的ZnO比(002)前驱金属膜制备的试样具有更高的PL强度.未完全氧化的Zn所形成的缺陷是PL强度较高的原因,SEM结果显示的ZnO薄膜表面粗糙度较大引起强烈的紫外吸收也是激发光强度高的原因之一.关键词......
microscopy (TEM) and photoluminescence (PL) spectroscopy. The results indicate that the core-shell structure product can be prepared, when the mole ratio of ZnSe to Cd(NO3)2 is larger than 1:1; and the product... is relatively small, which leads to a low concentration of defects in the shell. Meanwhile, the ZnSe/CdSe nanocrystals exhibit high photoluminescence (PL) quantum efficiencies, up to 80%-90% [6]. To date......
Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China) Abstract:Effect of annealing temperature and time on the microstructure and photoluminescence (PL... the thin films have a preferential c-axis orientation, which are enhances in the annealing process. It is found from the PL measurement that near band edge (NBE) emission and deep-level (DL) emissions......
).The photoluminescence (PL) properties of films were investigated and the optimum weight ratio between PVK and Tb(o-BBA)3(phen) was found to be 3:1.Monolayer devices with the structure ITO/PVK:Tb/Al were fabricated and emitted green light, which was characteristic of Tb3+ emission.The results show that mechanisms for PL and EL are different.The PL is considered to be caused because of energy transfer......
:Photoluminescent(PL) and cathodoluminescent(CL) properties of rare earths (Sc3+, La3+, Gd3+ and Lu3+) doped (Y0.97Tb0.03)2SiO5 were studied. Rare earth doping clearly influences PL and CL properties of Y2SiO5:Tb. For La3+ doped system, PL intensity increases nearly 10% at x=0.05 whereas for Lu3+ doped system, the intensity increases about 20% at x=0.20. Gd3+ doping and Sc3+ doping reduce the intensity......
photoluminescence (PL) spectra, optical properties, and chromaticity of Ca(La1-x-yTbxGdy)4Si3O13 phosphors by using synchrotron radiation. Upon analysis of the VUV spectroscopic and chromaticity.... The VUV PL intensity was found to enhance with Gd3+-doping. Furthermore, the 1931 CIE chromaticity coordinates of Ca(La,Gd)4Si3O13:Tb were found to be (0.286, 0.548), as compared to (0.230, 0.712......
