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" name="ChDivSummary">Boron-doped hydrogenated microcrystalline Germanium(μc-Ge:H) fi lms were deposited by hot-wire CVD. H2 diluted Ge H4 and B2H6 were used as precursors and the substrate temperature......
of Advanced Energy Materials Chemistry,Nankai University4. Tianjin Key Laboratory on Metal and Molecule-based Material Chemistry, Nankai University摘 要:Monocrystal......
Effects of Buffer Layer on Hetero-Epi-Growth of SiCGe on 6H-SiC Li Lianbi1,Lu Gang1,Pu Hongbin1,Tan Changxing1,Chen Zhiming1 (1.Department of Electronic Engineering, Xi′an University of Technology, Xi′an 710048, China) Abstract:Growth of SiCGe ternary alloy on 6H-SiC in a conventional hot-wall CVD system was initially studied. SiH4, GeH4 and C3H8 were employed as silicon, germanium and carbon......
, Wuhan University of Technology, Wuhan 430070, China) Abstract: GeSbS chalcogenide glasses with various ratios of germanium and antimony were prepared by conventional melt-quenching method. The results......
mAh·g-1at 2.0 C.This strategy offers a new route to fabricate highperformance porous Si anodes and can be extended to other materials such as germanium.关键词:......
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. On the basis of the model that regards the sheet containing only {110}<112> texture as a monocrystal, the relationship of in-plane anisotropy and the anisotropy of crystallography was analyzed. The study..., and the alloy sheet is looked on as a monocrystal. Fig.6 shows the relationship of the macro-coordinate system (the rolling direction, the transverse direction and the normal direction) with the coordinate......
tectonic attributes were studied. The characteristics of sandstone detrital composition of Hekou Formation show that the content of monocrystal quart (Qm) is 29%-81%, the polycrystal quart (Qp) is 2%-26......
