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Polymer grafting modification of the surface of nano silicon dioxideWei Wu, Jianfeng Chen, Lei Shao, Shouci LuResearch Center of the Ministry of Education for High Gravity of Engineering &...="ChDivSummary" name="ChDivSummary"><正>Based on the composite modification technology of the surface of nano silicon dioxide by non-soap emulsion polymerization, it is verified that there are polymer......
Photoluminescence from Silicon Nanocrystals in Encapsulating MaterialsZ.Deng,X.D.Pi,J.J.Zhao,D.YangState Key Laboratory of Silicon Materials and Department of Materials Science and Engineering,Zhejiang University摘 要:<正>Naturally oxidized freestanding silicon nanocrystals(Si NCs) are incorporated in commonly used encapsulating materials to explore......
Influence of rapid thermal process on intrinsic gettering in fast neutron irradiated Czochralski silicon CHEN Gui-feng(陈贵锋)1, LI Yang-xian(李养贤)1, LI Xing-hua(李兴华)1, CAI Li-li(蔡莉莉)1,MA Qiao-yun(马巧... Czochralski (CZ) silicon. The effect of RTP conditions on bulk microdefects (BMDs) and denuded zone (DZ) was investigated. Fourier transform infrared absorption spectrometer (FTIR) was used to measure......
Band offsets between amorphous La2Hf2O7 and silicon程学瑞1,王永强1,戚泽明2,张国斌2,王玉银2,邵涛2,张文华21. Department of Technology and Physics, Zhengzhou University of Light Industry2. National Synchrotron Radiation... and conduction band offsets between amorphous La2Hf2O7 film and silicon were determined by using synchrotron radiation photoemission spectroscopy. The energy band gap of amorphous La2Hf2O7 film......
Band offsets between amorphous La2Hf2O7 and silicon程学瑞1,王永强1,戚泽明2,张国斌2,王玉银2,邵涛2,张文华21. Department of Technology and Physics, Zhengzhou University of Light Industry2. National Synchrotron Radiation... and conduction band offsets between amorphous La2Hf2O7 film and silicon were determined by using synchrotron radiation photoemission spectroscopy. The energy band gap of amorphous La2Hf2O7 film......
Surface Tension of Molten Silicon Deduced from Wetting Experiments李建国摘 要:<正> The accurate measurements of the surface tension for molten silicon are not easy to be carried out.Themajor problem comes from the fact that it is very difficult to avoid the contamination of silicon surface byoxygen arising from experimental atmosphere or from......
Manipulation of space charge in silicon by intentionalthermal donor activation E. TUOVINEN, J. H?RK?NEN, P. LUUKKA, E. TUOMINEN Helsinki Institute of Physics, University of Helsinki...) silicon was carried out. The samples are p+/p/n+ diodes (active area 0.25 cm2, thickness 300 μm) made of <100> MCz p-type Si wafers with the resistivity of about 2 kΩ?cm. The concentration......
on technological optimization of SSP prepared from electronic grade silicon powder, SSP solar cell devices with simple structure are prepared and the effect of SSP substrate is discussed. Up to now...SUBSTRATE MATERIALS FOR POLY-CSiTF SOLAR CELLS:OPTIMIZATION OF SILICON SHEET FROM POWDER X.W. Zou1,H.Shen2,Z.C. Liang1,Q. Ban2,X.J. Wang1 (1.Guangzhou Institute of Energy Conversion, The Chinese......
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