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• Synthesis of Ag-Cr thin film metallic glasses with enhanced sulfide-resistance

  来源： 《JOURNAL OF MATERIALS SCIENCE TECHNOLOG2020年第18期》——Peng Jia Ruiwen Huang Suode Zhang Engang Wang Jiahao Yao

  Synthesis of Ag-Cr thin film metallic glasses with enhanced sulfide-resistancePeng Jia1,2,Ruiwen Huang1,2,Suode Zhang3,Engang Wang4,2,Jiahao Yao31. Key Laboratory of Electromagnetic Processing... of Sciences4. Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University摘 要:The thin film glass forming......

• 化学修饰对NiTi形状记忆合金氧化膜的影响

  来源： 《功能材料2002年第2期》——朱胜利 姚康德 崔振铎 杨贤金 何菲

  化学修饰对NiTi形状记忆合金氧化膜的影响 朱胜利1,姚康德1,崔振铎1,杨贤金1,何菲2 (1.天津大学材料科学与工程学院,天津,300072;2.天津大学一碳化工国家重点实验室,天津,300072) 摘要:用X光电子能谱(XPS)研究了NiTi形状记忆合金经酸,碱处理后表面氧化膜成分和结构的变化.结果表明,未经处理的NiTi合金表面最外层氧化膜主要由TiO2,TiO和少量的Ni组成,酸,碱处理后,最外层氧化膜由TiO2,Ni2O3组成,但经碱处理后,氧化膜的厚度大大增加. 关键词:NiTi形状记忆合金; 化学修饰; xPS; 氧化膜; [全文内容正在添加中] ......

• Hybrid functional IrO₂-TiO₂ thin film resistor prepared by atomic layer deposition for thermal inkjet printheads

  来源： 《中国有色金属学报(英文版)2011年第z1期》——Won-Sub KWACK Hyoung-Seok MOON Seong-Jun JEONG Qi-min WANG Se-Hun KWON

  Hybrid functional IrO2-TiO2 thin film resistor prepared by atomic layer deposition for thermal inkjet printheads Won-Sub KWACK1, Hyoung-Seok MOON2, Seong-Jun JEONG2, Qi-min WANG1, Se-Hun KWON1 1... printing today is in the DOD methods because of their low cost and high printing quality, and color capability[2]. In the thermal inkjet printer, a thin film resistor heater which converts an electrical......

• Effects of gradient interlayer on residual stress and cracking in TiN thin films

  来源： 《中国有色金属学报(英文版)2000年第3期》——漆璿 李戈扬 施晓荣 吕霞 李鹏兴

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• Magnetostrictive Flexible Thin Film Structure for Micro Devices

  来源： 《Journal of Rare Earths2007年第S1期》——Heung-Shik Lee Chongdu Cho

  Magnetostrictive Flexible Thin Film Structure for Micro DevicesHeung-Shik Lee,Chongdu Cho摘 要:Polyimide (Kapton, Dupont Corp.) based magnetostrictive thin film structures were designed and fabricated for micro device applications. In particular the growth of films on flexible substrates was studied to allow a simple integration of the system......

• Improvement of epitaxy and crystallinity in YBa₂Cu₃O_y thin films

  来源： 《中国有色金属学报(英文版)2006年第z1期》——高炬 杨坚

  buffer, demonstrate the advantages of such a double buffer structure. Key words: YBa2O3Oy; High Tc superconductor; thin film; buffer material; microstructure 1 Introduction Silicon is extensively used... better and stable. Fig.3 TEM image of cross section of YBCO/ECO/YSZ/Si thin film: 1 Si; 2 YSZ; 3 ECO; 4 YBCO It is worthy to point out that the ECO buffer can enforce a very good surface morphology......

• Growth and interface of amorphous La₂Hf₂O₇/Si thin film

  来源： 《Journal of Rare Earths2012年第2期》——程学瑞 戚泽明 张焕君 张国斌 潘国强

  Growth and interface of amorphous La2Hf2O7/Si thin film程学瑞1,戚泽明2,张焕君1,张国斌2,潘国强21. Department of Technology and Physics, Zhengzhou University of Light Industry2. National Synchrotron Radiation Laboratory, University of Science and Technology of China摘 要:Amorphous La2Hf2O7 thin films were deposited on Si(100) substrate by pulsed laser deposition (PLD......

• Growth and interface of amorphous La₂Hf₂O₇/Si thin film

  来源： 《JOURNAL OF RARE EARTHS2012年第2期》——程学瑞 戚泽明 张焕君 张国斌 潘国强

  Growth and interface of amorphous La2Hf2O7/Si thin film程学瑞1,戚泽明2,张焕君1,张国斌2,潘国强21. Department of Technology and Physics, Zhengzhou University of Light Industry2. National Synchrotron Radiation Laboratory, University of Science and Technology of China摘 要:Amorphous La2Hf2O7 thin films were deposited on Si(100) substrate by pulsed laser deposition (PLD......

• Effect of magnetic field on segregation behavior of α-Fe particles in Cu-Fe thin film prepared by magnetron sputtering

  来源： 《中国有色金属学报(英文版)2005年第z2期》——郑馥 李伟力

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• FERROELECTRIC CHARACTERISTICS OF SrBi2Ta2O9 THIN FILMS ANNEALED IN FORMING GAS

  来源： 《Acta Metallurgica Sinica2001年第6期》——A.D.Li N.B.Ming D.S.Wang Z.G.Liu D.Wu T.Yu A.Hu

  forming gas annealing. Key words:ferroelectric; SrBi2 Ta2 O9 thin film; forming gas annealing; [全文内容正在添加中] ...FERROELECTRIC CHARACTERISTICS OF SrBi2Ta2O9 THIN FILMS ANNEALED IN FORMING GAS A.D.Li1,N.B.Ming1,D.S.Wang2,Z.G.Liu1,D.Wu1,T.Yu2,A.Hu2 (1.Department of Material Science and Engineering & National......